ALD Chamber Pressure Dynamics for Plasma Film Removal
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Solution Overview
Problem
Automatic layer deposition (ALD) processes face challenges in preventing particle generation during the deposition process, which affects the quality of the films formed.
Innovation Solution
The method involves varying the pressure of the processing chamber while forming a plasma of a purge gas to remove deposited films, using a sequence of pressure changes to maintain plasma formation and prevent particle formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a plasma of a purge gas is formed in the processing chamber to remove deposited films, then the deposited materials are effectively removed from chamber surfaces, but particles are generated during the deposition process
Solution Approach 1:
The patent applies dynamics by varying the pressure of the processing chamber during plasma formation. Instead of maintaining constant pressure, the system dynamically adjusts pressure conditions to optimize both the removal of deposited films and the prevention of particle generation. This dynamic pressure control allows the plasma to effectively clean chamber surfaces while minimizing particle formation during the deposition process.
Solution Approach 2:
The patent utilizes parameter changes by modifying pressure conditions during plasma-based film removal. By changing the pressure parameter of the processing chamber while maintaining plasma formation, the system achieves effective removal of deposited materials without generating particles. This parameter adjustment optimizes the plasma's cleaning effectiveness while controlling harmful side effects.
2Object-generated harmful factors
If pressure of the processing chamber is varied to remove deposited films with plasma, then particle generation is prevented, but the process complexity increases
Solution Approach 1:
The patent employs parameter changes by systematically varying the pressure of the processing chamber during plasma formation. This controlled parameter adjustment enables effective removal of deposited films while preventing particle generation. The pressure variations are implemented through coordinated control of gas supply and exhaust systems, managing the added process complexity through structured parameter management.
Solution Approach 2:
The patent maintains continuity of useful action by keeping plasma formation continuous while varying pressure conditions. Rather than interrupting the plasma process to adjust parameters, the system continuously maintains plasma formation while dynamically adjusting pressure, ensuring uninterrupted film removal effectiveness and consistent particle prevention throughout the process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces particle generation, improving the quality of the deposited films by ensuring thorough removal of deposited materials from the chamber surfaces.
Implementation Method 1
a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma
Data Source
AI summary
A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.