Electric Discharge Tubes TRIZ Cases

Simultaneous fast and slow scanning captures dynamic beam profiles to resolve upstream focusing issues that reduce semiconductor device yield.

A multi-zone electrode array modulates RF power to control ion flux and energy across distinct plasma regions.

A rotating shielding unit switches regions adjacent to the laser focal point during substrate cleaning.

Segmented slots and an annular dielectric member in the antenna body prevent gas conversion into plasma within the shower plate, eliminating power loss.

Alternating power output and pulse pause periods minimizes temperature gradients in semiconductor switching elements, preventing thermal expansion stress.

A gas spraying apparatus with a spray control unit automatically manages nozzle operations to achieve targeted gas density distributions.

A microwave output device pulse-modulates power levels using a directional coupler and measurer to maintain precise energy delivery.

Integrates plasma-assisted and plasma-free etching to resolve the trade-off between high selectivity and volume etching rate.

Magnetic confinement traps energetic electrons in the plasma source chamber, reducing neutral species concentration and parasitic effects on the work piece.

An inductively coupled RF plasma source combines magnetic confinement with Faraday shielding to suppress parasitic capacitive components.

Purge gas flow through a lid member gap prevents reaction gas entry into the bellows, reducing particle generation and contamination risks.

Control device sets second matching device impedance to block diverted first radio frequency power, stabilizing plasma processing.

Atmospheric pressure plasma jet eliminates vacuum constraints and charging effects while depositing durable layers onto etched polymer surfaces.

Cyclic vapor deposition of transition metal halides enables selective material growth on specific substrate surfaces.

A cooled pin lifter paddle circulates coolant through peripheral flow passages to remove heat from a semiconductor processing chamber.

A focused ion beam apparatus varies irradiation parameters to etch sample cross sections with uniform rates.

A fixed focus ring system moves wafers vertically using pins and horizontally through a slit valve.

Segmented upper plate contact patterns with varying surface roughness reduce de-chucking time and prevent substrate damage.

A method using electron diffraction tomography to collect quasi-kinematical patterns from discrete sample locations.

Segmented heaters and cooling members adjust focus ring temperature for uniform plasma etching.

Sequential chemical cleaning of electrode assemblies removes surface contamination and roughness.

A movable inner barrel isolates process gas from chamber walls, preventing deposition while allowing substrate replacement under maintained vacuum pressure.

A focused ion beam system acquires composite field ion microscope images by combining multiple partial views.

Dynamic pressure control during purge gas plasma cleaning removes deposited films while preventing particle generation in atomic layer deposition chambers.

A charged particle scanner uses multiple coulomb scattering and attenuation to map atomic number and density.

A grounded metallic mask transfers patterns via a collimated electron beam to a photoresist layer without physical contact.

A pulsed ion beam extracts ions from plasma to direct material removal toward a substrate with high precision.

A processing chamber disrupts the boundary layer using mechanical vibration and fluid pulsing to improve chemical utilization efficiency.

An electromagnetic compound lens combines a permanent magnet and an electrostatic lens to focus charged particle beams with adjustable power.

Radially offsetting screws via hammerhead spokes creates a non-continuous ring that minimizes electric field concentration and prevents arcing damage.

Pulsed radio frequency power maintains low electron temperature to suppress re-dissociation and substrate contamination.

Gas cluster ion beam etching removes material from conformal layers in high aspect ratio vias, preventing critical dimension loss and corner erosion.

Projecting pieces on a plate-shaped portion prevent incorrect attachment of battery detection terminals.

Protruding portion of cylindrical insulating component fits into placing table dent to align power feeding terminal and prevent electric discharge.

Elevating the target material above the backing plate frame enables uniaxial diffusion bonding using a hot press.

Test patches generate a calibration curve to determine target treatment time, resolving surface roughness inconsistency on nonhomogeneous materials.

Optimizing pressure below 7 mTorr and temperature at 0°C or less prevents bowing in amorphous carbon mask layers during semiconductor device fabrication.

A lamp socket contact uses a backup spring to maintain tension on electrical lead-ins.

A deflectable socket arrangement enables flexible end block mounting through elastic fastening elements.

A substrate bias electrode generates an electrostatic field to dynamically focus multiple electron beams onto a semiconductor wafer surface.

A charged particle beam device synthesizes overlapping images using irradiation marks as reference points for precise pattern alignment.

A plasma trap collects metal-containing gases in semiconductor exhaust systems, resolving the trade-off between collection efficiency and pump conductance.

A sputtering apparatus shutter and shield design creates a gas diffusion space to supply gas near the target for plasma ignition.

A sensor array measures complex self and mutual impedances to reconstruct plasma dielectric profiles.

Direct parameter monitoring bypasses database storage lags by converting communication standards between control units and the main computer.

Segmented insulating case enables precise microhole machining to reduce length and prevent arc discharge in semiconductor apparatus.

Symmetric liner slots balance azimuthal RF current flow, eliminating electrical skews that cause non-uniform etch rates across substrates.

Opposing magnetic fields correct angular dispersion to match emergence distribution with the incident beam, increasing transmission efficiency.