Injector Unit Gas Distribution for ALD Processing Efficiency
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Solution Overview
Problem
Existing layer-forming devices using atomic layer deposition (ALD) technology face challenges in increasing processing efficiency due to complex structures and difficulty in maintaining consistent gas injection, leading to reduced reliability and uniformity of thin layer formation.
Innovation Solution
A layer-forming device with a simplified injector design featuring tubular continuous holes and ring-shaped openings for gas supply, exhaust, and inert gas injection, allowing for improved gas distribution and separation, thereby enhancing processing efficiency and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of output channels is increased and widths are narrowed to improve processing amount per unit time, then productivity increases, but device complexity increases and reliability decreases
Solution Approach 1:
The supply head is divided into multiple independent output channels, each capable of supplying different gases (first reactive gas, inert gas, second reactive gas) separately. This segmentation allows for increased number of channels without proportionally increasing overall complexity, as each channel can be designed and controlled independently.
Solution Approach 2:
Each output channel is designed to handle multiple gas types (reactive gas and inert gas) through a unified structure. The supply head can alternately supply different gases through the same channel configuration, reducing the need for separate dedicated channels for each gas type and thereby reducing overall device complexity.
2Productivity
If the number of output channels is increased and widths are narrowed to improve processing amount per unit time, then productivity increases, but reliability decreases due to difficulty in maintaining consistent gas injection
Solution Approach 1:
Each output channel is equipped with locally optimized gas supply slots positioned at specific locations (first through fourth slots) to ensure uniform gas distribution. The channel widths and slot positions are carefully designed to maintain consistent gas flow characteristics across all channels, ensuring uniform thin layer formation even with increased channel count.
Solution Approach 2:
The gas supply system performs preliminary evacuation of the chamber before alternating gas supply. This preliminary action ensures that residual gases are removed, preventing contamination and ensuring consistent gas injection characteristics across all channels from the start of each deposition cycle.
3Productivity
If narrow range output channels are provided to increase processing amount, then productivity increases, but manufacturing cost increases due to complicated structure
Solution Approach 1:
Multiple gas supply functions (first reactive gas, inert gas, second reactive gas) are merged into a single integrated supply head structure with shared components. The output channels use common structural elements and can be manufactured as a unified assembly, reducing manufacturing complexity and cost compared to having separate independent supply systems for each gas type.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The improved injector and layer-forming device increase processing efficiency by allowing for narrower output channels and more channels, reducing complexity and maintaining consistent gas injection, resulting in enhanced uniformity and reliability of thin layer formation.
Implementation Method 1
first gas exhaust slots provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and configured to suck an excess gas above the substrate
Implementation Method 2
an inert gas is caused to flow and function as a barrier gas that separates two types of gases so that the gases containing the two types of precursors are not mixed and reacted in a gas phase
Implementation Method 3
an atomic layer deposition (ALD) technology is widely used when a thin layer is formed on a substrate. The ALD technology is to form a layer having a desired thickness by alternately supplying on the substrate two types of precursors
Data Source
Figure 1
Figure 2A~2B
Figure 3A~3B
AI summary
A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit provided with a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit configured to generate a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas, the inert gas supply slots being provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.