ALD Film Forming Apparatus with Segmented Gas Flow Paths
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Solution Overview
Problem
Atomic layer deposition (ALD) processes face challenges in achieving high productivity and ensuring good step coverage on substrates with concave features, as increasing the flow rate of source gases to enhance partial pressure leads to prolonged processing times and reduced throughput.
Innovation Solution
A film forming method using a film forming apparatus with separate purge gas flow paths and a controller to manage gas flow rates, allowing for continuous carrier gas supply and alternating source and reactant gas adsorption, with an additive gas like H2 used during purge processes to enhance film quality and productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the flow rate of source gas is increased to enhance partial pressure, then step coverage is improved, but processing time is prolonged and throughput is reduced
Solution Approach 1:
The gas supply system is segmented into separate flow paths: a first flow path for source gas and a second flow path for reactant gas. This allows independent control of each gas flow rate, enabling optimization of source gas flow for step coverage without compromising overall processing throughput.
Solution Approach 2:
The system dynamically adjusts gas flow rates during different process stages. During the reaction phase, source gas flow is increased to enhance step coverage. During purge phases, flow rates are adjusted to maintain throughput. The controller adapts flow parameters in real-time based on process requirements.
2Manufacturing precision
If the flow rate of source gas is increased to enhance partial pressure, then film quality is improved, but processing time is prolonged
Solution Approach 1:
Separate flow paths allow independent optimization of source gas flow for film quality without extending total processing time. The reactant gas flow path can be optimized separately to ensure rapid reaction completion.
Solution Approach 2:
The system changes gas flow parameters dynamically during different process stages. Source gas flow rate is increased during reaction phases to improve film quality, while purge phase durations are adjusted to maintain overall processing time efficiency.
3Reliability
If inert gas is supplied to purge the processing container, then gas phase reactions are prevented, but processing time is increased
Solution Approach 1:
The purge gas flow path is separated from the carrier gas flow path, allowing independent control of purge gas flow rate. This enables rapid purging without affecting the continuous supply of carrier gas during reaction phases.
Solution Approach 2:
The carrier gas continues to flow continuously through the first and second flow paths during reaction phases, maintaining process continuity. The purge gas is supplied separately through the third flow path only when needed, minimizing interruption to the overall processing sequence.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures high productivity and achieves films with improved coatability and specific resistance characteristics without degrading throughput, by efficiently managing gas flow and utilizing H2 during purge processes.
Implementation Method 1
a first carrier gas flow path and a second carrier gas flow path which are connected to the source gas flow path and the reactant gas flow path, respectively, and supply the carrier gases for the source gas and the reactant gas
Implementation Method 2
a second process of causing the source gas adsorbed to a surface of the substrate to be processed by supplying the source gas into the processing container through the source gas flow path
Implementation Method 3
a fourth process of causing the source gas and the reactant gas to react with each other by supplying the reactant gas into the processing container through the reactant gas flow path
Implementation Method 4
a purge gas flow path which is provided separately from the first carrier gas flow path and the second carrier gas flow path and supplies the purge gas for purging the interior of the processing container
Implementation Method 5
a gas discharge mechanism which discharges gases in the processing container and maintains a vacuum atmosphere in the processing container
Data Source
AI summary
A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.