Segmented Gas Regions in ALD Substrate Processing
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Solution Overview
Problem
The existing atomic layer deposition (ALD) process is limited by slow deposition speed and inefficiencies in gas purging, leading to incomplete film formation and potential mixing of source and reactant gases, resulting in lower film quality and longer processing times.
Innovation Solution
A substrate processing apparatus with separate regions for source and reactant gas injection, using plasma-generated purge gases to enhance film quality and ensure complete gas separation, featuring rotatable substrate support and plasma generation in specific regions to facilitate efficient thin film formation and purging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the ALD process supplies source gas and reactant gas sequentially to induce surface reaction, then a uniform thin film is formed on fine patterns, but the deposition speed is lower than CVD process
Solution Approach 1:
The process chamber is divided into a source gas supply region and a reactant gas supply region that are spatially separated. The source gas is supplied to one region while the reactant gas is supplied to another region, preventing gas mixing while maintaining sequential processing. This segmentation allows the ALD process to maintain its precise surface reaction mechanism while improving deposition efficiency through optimized gas flow paths and reduced purging time.
2Loss of time
If the ALD process quickly repeats source gas supply, purging, reactant gas supply, and purging steps, then processing time is reduced, but source gas and reactant gas are not completely discharged leading to CVD thin film formation instead of pure ALD film
Solution Approach 1:
The process chamber is segmented into distinct source gas supply region and reactant gas supply region. This spatial separation allows for faster purging because each gas type is confined to its own region, eliminating the need to purge the entire chamber volume. The source gas is discharged from the source region while the reactant gas is supplied to the reactant region, preventing mixing and enabling quicker cycle times without sacrificing film purity.
Solution Approach 2:
A purge gas is introduced as an intermediary substance to facilitate the discharge of source gas and reactant gas from their respective regions. The purge gas flows through the source region to remove residual source gas, then flows through the reactant region to remove residual reactant gas before the next deposition cycle. This intermediary purge mechanism enables complete gas discharge without requiring excessive purging time, maintaining both film purity and processing efficiency.
3Device complexity
If source gas and reactant gas are supplied to the same process space, then the apparatus structure is simpler, but the two gases mix causing incomplete ALD reaction and reduced film quality
Solution Approach 1:
The process chamber is divided into a source gas supply region and a reactant gas supply region with physical or flow-based separation. The source gas injection unit supplies source gas to the source region, while the reactant gas injection unit supplies reactant gas to the reactant region. This segmentation prevents gas mixing while maintaining a relatively simple overall apparatus structure, as the regions share the same chamber and substrate support system. The separation ensures that source gas and reactant gas do not mix, preserving the purity of ALD film formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the formation of high-quality, pure ALD thin films by completely separating source and reactant gas spaces and utilizing plasma to improve film density and remove internal impurities, thereby enhancing the efficiency and quality of the ALD process.
Implementation Method 1
The source gas may be adsorbed onto the surface of the substrate by supplying the source gas to the substrate first
Implementation Method 2
by supplying the reactant gas to the substrate, the reactant gas may react with the source gas adsorbed onto the surface of the substrate, and then, an atomic layer or a single-layer thin film is formed on the surface of the substrate on the basis of the reaction between the source gas and the reactant gas
Implementation Method 3
the other source gas may be removed by using a purge gas. Subsequently, by supplying the reactant gas to the substrate, the reactant gas may react with the source gas adsorbed onto the surface of the substrate, and then, the other reactant gas may be purged by using the purge gas
Data Source
AI summary
The present inventive concept relates to a substrate processing device and a substrate processing method. The substrate processing device comprises: a chamber; a substrate support part rotatably installed in a process space inside the chamber so as to allow at least one substrate to be seated thereon; a first gas spray unit for spraying, to a first region of the process space, a source gas and a first purge gas for purging the source gas; a source gas supply source for supplying the source gas to the first gas spray unit; a first purge gas supply source for supplying the first purge gas to the first gas spray unit; a second gas spray unit spatially separated from the first region and configured to spray, to a second region of the process space, a reactant gas reacting with the source gas and a second purge gas for purging the reactant gas; a reactant gas supply source for supplying the reactant gas to the second gas spray unit; and a second purge gas supply source for supplying the second purge gas to the second gas spray unit.