Electric Discharge Tubes TRIZ Cases

Hydrogen-rich plasma processing gas etches silicon-containing films with high selectivity against metal masks.

A control unit calculates frequency characteristics from reference sample images to generate correction coefficients for image processing.

Tandem electrode pairs in an electrostatic bend locally deflect decelerated ion beams to correct longitudinal profile non-uniformity.

An electron microscope system corrects characteristic X-ray dead time to enhance signal strength and energy resolution.

Differentiating surface roughness on a substrate mounting table prevents electrical floating arcing while enhancing film adhesion.

Inclined exposure stripes average aperture imperfections across beamlets, reducing substripe variations and improving CD uniformity.

Cam locks clamp a monolithic showerhead electrode to a backing plate, resolving temperature control reliability and gas distribution uniformity trade-offs.

Plasma treatment modifies liquid surfaces to increase surface energy and reduce water contact angle, countering temporary hydrophobic recovery.

Segmented detectors and a compensator reduce inter-symbol interference errors while maintaining low power consumption.

Segmenting the extruded profile into a closed body and hinged door eliminates laborious milling while maintaining leak-tightness.

Cooling the substrate near the NF3 boiling point prevents toxic XeF2 use while enabling efficient reaction product desorption for precise pattern removal.

Gravity-fed vertical feeding minimizes tension on heated sheets, preventing shrinkage and wrinkling defects during continuous roll-to-roll processing.

Screwable self-locking interface replaces messy adhesives with mechanical fixation, preventing bulb separation.

An inlet manifold assembly directs process gas through injection holes to enhance flow patterns.

Optimizing ion energy distribution via dual frequency power reduces critical dimension non-uniformity in self-assembled block copolymer patterns.

A plate-like movable pin with a flexible part connects to an overlapping conduction-path forming element along its thickness.

A silicon single crystal calibration sample with intersecting recess structures enables precise electron beam incident angle measurement.

Elastic conductive terminals in a slide connector withstand vibration impact, reducing connection failures and enabling hot swapping.

An adjustment plate with inclined holes redistributes asymmetric exhaust airflow to resolve non-uniform gas distribution caused by concentrated vacuum pressure.

A focusing magnet deflects charged particle beams to an isocenter using a specific magnetic field region.

An insulating connector base with a conductive section fits between shunt resistor electrodes, eliminating difficult welding in narrow modules.

Laser ablation creates cantilever samples from substrates, eliminating expensive mechanical trepanning and complex optical adjustments.

Remote plasma etches carbon hardmask films using fluorine and oxygen precursors, achieving 75:1 selectivity over silicon without ion damage.

A non-dissipative snubber circuit boosts voltage using a unidirectional switch and voltage multiplier to enhance current ramp rates.

Spatially separated gas regions prevent mixing of source and reactant gases, enabling faster purging cycles and higher film purity.

Chlorine gas activation forms an adsorption inhibitor group on the substrate surface to enable selective source gas adsorption.

A ring reflector redirects photons to a detector above the specimen in a scanning electron microscope.

Atomic layer deposition creates nanolaminate spacer films with alternating compositions for semiconductor patterning.

Modulating high frequency power alternates plasma generation with suppression phases, reducing ion sputtering erosion on the electrostatic chuck.

Applying negative bias voltage to an adhesion body recovers wasted sputtered particles, boosting target utilization efficiency and film-forming rates.

An asymmetric waveguide design concentrates microwave energy at a slot, generating a strong electric field that ensures stable plasma production.

A device processing method fabricates a prototype structure using an ion beam to measure its size and determine conditions for a second structure.

Segmented parallel plates and interposed reference electrodes expand treated surface area in plasma immersion ion implantation systems.

Vacuum sample chamber top plate uses a gap configuration to prevent deformation transmission from the preliminary exhaust chamber.

Articulated arms move coupling heads to establish hollow cathode effects within complex workpieces, reducing anode degradation during deposition.

A porous gold foil sample support provides secondary electrons to neutralize specimen charging during electron microscopy imaging.

Pre-calculating optimal RF values and impedance settings during state transitions reduces reflected power toward the RF generator.

A simulation method calculates a common control index using reaction product flux to evaluate wafer surface shape.

Segmented return paths isolate RF sensing from plasma impedance shifts, preserving measurement precision and process stability.

Temperature-controlled depolymerization removes solid buildup from gas supply lines, ensuring accurate flow rate control.

Segmented sample stage electrodes adjust radio frequency power amplitude to resolve non-uniform ion energy distribution across the wafer surface.

Segmented ground planes apply independent bias voltages to create localized plasma densities, eliminating edge effects and boosting device yield.

Detector uses electron-to-photon conversion to resolve unfavorable photon-to-electron signal ratios, enabling simultaneous energy-resolved measurements.

A ballistic material jet source mounts externally on a transmission electron microscope column to project particles into the object chamber.

Concentrically aligned slots in a multi-plate showerhead structure direct gas flow through segmented channels.

A substrate processing device uses a heat hole in the disk part to transfer thermal energy to pocket parts for plasma deposition.

Grounded wiring layer connects adjacent electrodes to suppress unintended beam deflections caused by moisture absorption and charging effects.

Micromachined microelectrodes produce stable low-temperature plasma at atmospheric pressure, preventing thermal damage to cells during apoptosis.

Separating plasma generation from the process chamber via an insulating tube prevents substrate damage while maintaining high film formation speed.

A movable plasma electrode dynamically adjusts its position and shape to resolve non-uniform etching across wafer surfaces in semiconductor fabrication.