RF Sensing Apparatus Return Path Design for Plasma Chamber Impedance Stability

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Solution Overview

Problem

The introduction of RF sensing apparatuses into plasma processing chambers alters the electrical characteristics of the chamber, affecting the accuracy of RF measurements and process outcomes in semiconductor fabrication.

Innovation Solution

An RF sensing apparatus is designed with a penetration unit, a main return path unit, and a secondary return path unit, which form a return current path to minimize changes in the chamber's electrical characteristics by allowing a majority of the return current to flow through the main path and a smaller portion through the secondary path, reducing interference and maintaining process stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If an RF sensing apparatus is introduced into a plasma processing chamber to obtain RF measurement data, then RF measurement capability is improved, but the electrical characteristics (impedance) of the plasma processing chamber change

Engineering Contradiction:
ImproveRF measurement capabilityVSAvoidelectrical characteristics stability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

A dielectric member is introduced as an intermediary between the RF sensing apparatus and the plasma processing chamber. This dielectric member electrically isolates the sensing apparatus from directly interacting with the plasma chamber's electrical environment, thereby preventing the sensing apparatus from significantly altering the chamber's impedance and electrical characteristics while still enabling RF measurement functionality

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The return current path is segmented into multiple paths (first return path and second return path) with different impedances. By providing multiple return paths with controlled impedance values, the system can manage current distribution to minimize interference with the plasma chamber's electrical characteristics while maintaining effective RF sensing

Inventive Principle:
Principle #1Segmentation

2Measurement precision

If a conducting rod is inserted into the plasma processing chamber for RF sensing, then RF measurement is enabled, but the physical presence of the rod alters the RF environment

Engineering Contradiction:
ImproveRF measurement capabilityVSAvoidRF environment alteration
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The dielectric member serves as a mediator that allows the conducting rod to be present for RF sensing while preventing it from directly disturbing the plasma chamber's RF environment. The dielectric material blocks direct electromagnetic interaction between the rod and the plasma, reducing unwanted alterations to the RF environment

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

A dielectric coating or thin film is applied to the conducting rod. This dielectric layer acts as a protective shell that electrically isolates the conducting rod from the plasma environment, allowing the rod to function for RF sensing while minimizing its physical disruption to the RF environment and plasma processes

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration significantly reduces the change in electrical characteristics, enhancing the accuracy of RF measurements and maintaining process stability, thereby ensuring that processes run closer to specifications.

Implementation Method 1

a coil-type wiring disposed between the main return path unit and the secondary return path unit

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Data Source

PatentUS10901007B2RF sensing apparatus of plasma processing chamber and plasma processing chamber including same
Publication Date: 2021.01.26 SAMSUNG ELECTRONICS CO LTD
  • US10901007B2 patent drawing
  • US10901007B2 patent drawing
  • US10901007B2 patent drawing

AI summary

An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.