Gas Supply Line Film Depolymerization Cleaning
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Solution Overview
Problem
In semiconductor processing, the generation of solid materials in gas supply lines due to reactions between processing gases and moisture or residual gases leads to errors in gas flow rate control, device malfunctions, and wafer defects, as these solids can adhere to valves and enter the processing chamber.
Innovation Solution
A method involving the formation and removal of a film on the inner walls of gas supply lines using isocyanate and amine or hydroxyl group-containing compounds, where the film is polymerized at a controlled temperature and depolymerized after processing to clean the lines, preventing solid buildup and maintaining flow rate accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If processing gases are supplied to the gas supply line for semiconductor processing, then the processing can be performed, but solid materials are generated due to reactions with moisture or residual gases, causing control errors and device malfunctions
Solution Approach 1:
A protective film is formed on the inner wall of the gas supply line before processing gases are supplied. This film acts as a barrier that prevents reactions between processing gases and moisture or residual gases, thereby preventing solid material generation while maintaining reliable gas flow rate control throughout the processing cycle
Solution Approach 2:
The protective film serves as an intermediary layer between the processing gases and the inner wall of the gas supply line. This film mediates the interaction by providing a chemically resistant barrier that prevents harmful reactions without interfering with the normal flow of processing gases
2Ease of manufacture
If the gas supply line is cleaned by conventional methods, then some solids may be removed, but the line must be disassembled and the cleaning process is time-consuming and complex
Solution Approach 1:
The protective film is designed to be automatically removed through a simple heating process that causes depolymerization. The film self-destructs when exposed to elevated temperatures, eliminating the need for manual disassembly or complex cleaning procedures and significantly reducing cleaning time
Solution Approach 2:
The protective film undergoes a phase transition through depolymerization when heated to a specific temperature. This thermal decomposition transforms the polymerized film back into its monomeric form, allowing it to be easily flushed out of the gas supply line without mechanical intervention
3Reliability
If a protective coating is applied to the gas supply line inner wall to resist halogen-containing gases, then corrosion resistance is improved, but the coating may interfere with gas flow and require periodic maintenance
Solution Approach 1:
The protective film system is dynamic rather than static. The film can be formed on demand before processing and removed easily after processing through simple heating. This dynamic approach eliminates the need for permanent coatings that require periodic maintenance, as the film is temporarily created and then completely removed after use
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents solid buildup in gas supply lines, ensuring accurate gas flow and preventing device malfunctions and wafer defects by maintaining the integrity of the gas supply system.
Implementation Method 1
a film of a compound on an inner wall of a gas supply line is formed by polymerization of a first compound and a second compound by controlling a temperature of the gas supply line to a first temperature
Implementation Method 2
the film is removed by controlling the temperature of the gas supply line to a second temperature at which the film is depolymerized
Data Source
AI summary
A method includes forming a film of a compound on an inner wall of a gas supply line by polymerization of a first compound and a second compound by controlling a temperature of the gas supply line to a first temperature at which the first compound and the second compound are polymerized in a state where a first gas containing the first compound and a second gas containing the second compound are supplied to the gas supply line, and removing the film by controlling the temperature of the gas supply line to a second temperature at which the film is depolymerized after predetermined processing is performed on a target object in a processing chamber by a processing gas supplied into the processing chamber through the gas supply line having the film. The first compound is isocyanate. The second compound is amine or a compound having a hydroxyl group.