Ion Implantation Machine Substrate Holder Segmentation
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Solution Overview
Problem
Ion implantation machines in plasma immersion mode have limited productivity due to restricted surface area treatment, which hinders efficient processing of multiple substrates simultaneously.
Innovation Solution
The ion implantation machine features a substrate holder with multiple parallel plates and interposed blades connected to a bias power supply, along with a plasma source and magnetic coils, allowing for increased surface area treatment and improved plasma confinement, thereby enhancing the number of substrates that can be implanted simultaneously.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a single substrate tray is used in the enclosure, then the device structure is simple, but the total surface area for substrate treatment is limited
Solution Approach 1:
The substrate holder is segmented into multiple parallel plates (at least two) instead of using a single tray. Each plate can hold substrates, and the plates are arranged parallel to each other within the enclosure. This segmentation multiplies the total substrate treatment surface area while maintaining a manageable structural complexity through modular design.
Solution Approach 2:
The invention transitions from a single-plane substrate holder to a multi-plane configuration with parallel plates arranged in the spatial dimension. By utilizing the third dimension (depth/space within the enclosure) to stack multiple plates, the system increases the total treatment area without proportionally increasing the enclosure footprint, effectively adding dimensional efficiency to the design.
2Productivity
If multiple parallel plates are used as substrate holder, then the number of implanted substrates is increased, but the plasma confinement and uniformity may be compromised
Solution Approach 1:
Reference electrodes (blades) are introduced as intermediary elements positioned between the parallel substrate holder plates. These reference electrodes serve as mediators that help establish and maintain a uniform electric field distribution across the plasma region, ensuring consistent plasma characteristics and ion implantation uniformity across all substrate surfaces, thereby maintaining reliability while enabling increased productivity.
Solution Approach 2:
The system utilizes controllable parameters including the spacing between parallel plates, the positioning and configuration of reference electrodes, and the applied voltage characteristics to optimize plasma formation and distribution. By carefully adjusting these parameters, the system achieves uniform plasma confinement across multiple substrate surfaces, ensuring reliable and consistent ion implantation results.
3Manufacturing precision
If reference electrode blades are interposed between plates, then plasma distribution is improved, but the device complexity increases
Solution Approach 1:
The reference electrode is segmented into multiple blades that are individually positioned between the parallel substrate holder plates. Each blade acts as an independent element for local plasma control, allowing precise adjustment of electric field distribution across different regions. This segmented approach achieves high manufacturing precision and uniform ion implantation while maintaining modular simplicity in the overall electrode configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration doubles the treated surface area and significantly increases the number of implanted substrates, facilitating more efficient processing and potentially enabling hot implantation for defect reconstruction and dopant activation.
Implementation Method 1
the plasma source consists of the substrate holder and the support, with a discharge voltage being applied between these two elements
Implementation Method 2
polarizing it with a negative voltage, from a few tens of volts to a few tens of kilovolts (generally less than 100 kV), in order to create an electric field capable of accelerating the ions from the plasma towards the substrate
Implementation Method 3
the ion implantation machine include magnetic coils arranged outside the enclosure around the substrate holder
Implementation Method 4
the ion implantation machine includes a means of heating the substrate holder. It is therefore possible to perform the implantation while hot, which promotes the reconstruction of defects and/or the activation of dopants in situ
Data Source
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AI summary
The present invention concerns an ion-implantation machine (100) that comprises: - an enclosure (101) that is connected to a pumping device (102), - a plasma source (115-121-122), - a bias supply (113), - a gas inlet (117) arranged on this enclosure, - a substrate support (104) connected to the negative pole of this bias supply and arranged in the enclosure. This machine is remarkable in that: - the substrate support 104 consists of at least two parallel plates (105, 106), - a reference electrode consists of at least one blade (110), said reference electrode being connected to the positive pole of the bias supply, - said blade being inserted between the two plates.