Plasma Generator Insulating Tube for CVD Substrate Protection
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Solution Overview
Problem
Conventional CVD apparatuses face challenges in preventing substrate damage from plasma and achieving efficient formation of high-quality, high-concentration functional films, particularly in semiconductor manufacturing, due to complex apparatus configurations and inefficient plasma gas supply.
Innovation Solution
A plasma generation apparatus with a dielectric barrier discharge system that separates the plasma generation and substrate processing regions, using a cylindrical insulating tube with ejection holes to efficiently generate and direct plasma excitation gas for reaction with metal precursors, thereby producing functional metal particles without direct exposure to the CVD chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-frequency plasma or microwave plasma is directly generated in the process chamber, then film formation speed increases and formation time shortens, but the wafer substrate is largely damaged by plasma ions or electrons
Solution Approach 1:
The invention divides the plasma generation system into two separate parts: a plasma generation chamber and a process chamber. The plasma generation chamber produces high-concentration radical gas, which then flows into the process chamber where film deposition occurs. This segmentation allows plasma to be generated at high power without directly exposing the substrate to harmful plasma ions and electrons, thus resolving the contradiction between film formation speed and substrate damage.
Solution Approach 2:
The harmful plasma components (ions and electrons) are extracted from the process by generating plasma in a separate chamber. Only the beneficial radical species are transported to the process chamber through controlled gas flow, while the damaging charged particles remain confined to the plasma generation chamber. This extraction approach maintains high film formation speed while eliminating substrate damage.
2Object-affected harmful factors
If thermal or photo CVD apparatuses are used to avoid plasma damage, then substrate damage is prevented, but it is difficult to provide a nitrogen radical gas source or oxygen radical source with high concentration and large amount, requiring very long film formation time
Solution Approach 1:
The invention performs preliminary plasma treatment in a separate generation chamber before the actual film deposition process. High-concentration radical gas is pre-generated and then supplied to the process chamber, allowing rapid film formation without directly exposing the substrate to damaging plasma. This preliminary action enables both substrate protection and high productivity.
Solution Approach 2:
The invention uses an intermediary gas flow system to transport radical species from the plasma generation chamber to the process chamber. This intermediary approach allows the benefits of plasma-generated radicals to be delivered to the substrate without the harmful effects of direct plasma exposure, thus preventing substrate damage while maintaining short film formation time.
3Object-affected harmful factors
If a remote plasma type apparatus is used to reduce substrate damage, then plasma damage is reduced, but the apparatus structure becomes complicated and efficient generation and supply of plasma excitation gas is difficult
Solution Approach 1:
The invention segments the apparatus into distinct functional modules: a plasma generation chamber with electrodes and a separate process chamber. This segmentation simplifies the overall structure by clearly defining functional zones, making the apparatus easier to design, manufacture, and maintain while still achieving remote plasma effects that protect the substrate.
4Ease of manufacture
If metal precursor gas is directly supplied into the CVD chamber, then the CVD chamber structure and control operation become complicated
Solution Approach 1:
The invention performs preliminary modification of the metal precursor gas in the plasma generation chamber before it enters the CVD chamber. The plasma excitation gas reacts with the metal precursor to form functional metal material particles in advance, simplifying the CVD chamber structure and control operations while maintaining high efficiency in functional film formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for the efficient generation and utilization of high-concentration plasma excitation gas to form high-quality functional films on semiconductor substrates, reducing substrate damage and simplifying the CVD chamber structure, while enhancing film formation speed and quality.
Implementation Method 1
A plasma generation apparatus with a dielectric barrier discharge system that separates the plasma generation and substrate processing regions
Implementation Method 2
configured to generate, from a source gas, a large amount of plasma excitation gas (active gas, radical gas) with a high energy and a high concentration
Implementation Method 3
an insulating tube having a cylindrical shape and arranged in the pass-through, the insulating tube including an ejection hole that is formed in a side surface of the cylindrical shape
Implementation Method 4
configured such that a reaction is caused between the plasma excitation gas generated in the plasma generation apparatus and a precursor of metal atoms supplied to the plasma generation apparatus so that modification into functional metal material particles is achieved
Implementation Method 5
a CVD apparatus... configured such that a reaction is caused between the plasma excitation gas generated in the plasma generation apparatus and a precursor of metal atoms supplied to the plasma generation apparatus so that modification into functional metal material particles is achieved, and that the functional metal particles obtained by the modification are efficiently led to the CVD apparatus
Data Source
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AI summary
The present invention provides a plasma generation apparatus that is able to efficiently output a large amount of functional metal material particle gas, which is used for forming a functional insulating film on a processing object material. A plasma generation apparatus 100 according to the present invention includes an electrode cell and a housing (16) that encloses the electrode cell. The electrode cell includes a first electrode (3), a discharge space (6), a second electrode (1), dielectrics (2a ,Pb), and a pass-through (PH) formed in a central portion in a plan view. An insulating tube (21) having a cylindrical shape is arranged within the pass-through (PH). Ejection holes (21x) are formed in a side surface of the cylindrical shape. The plasma generation apparatus (100) further includes a precursor supply part (201) that is connected to a hollow portion (21A) of the insulating tube (21) and configured to supply a metal precursor.