Electron Beam Deflection Control via Grounded Wiring and Antistatic Film
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Solution Overview
Problem
In semiconductor device manufacturing, existing technologies face challenges in effectively controlling electron beam deflection and suppressing unintended deflections due to moisture absorption and charging issues in the blanking aperture array, leading to inefficiencies in the multi-electron beam exposure process.
Innovation Solution
A semiconductor device configuration with a substrate having through holes, insulating layers, and electrodes, where the wiring layer is grounded to prevent unintended electron beam deflections, and an antistatic film is used to mitigate charging effects, ensuring precise electron beam control and reducing substrate warpage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a blanking aperture array is used to control electron beam deflection in multi-beam exposure, then throughput is improved, but unintended beam deflections occur due to moisture absorption and charging effects
Solution Approach 1:
An antistatic film is introduced as an intermediary layer between the substrate and the insulating layer. This film acts as a mediator to suppress charging effects and moisture absorption, thereby preventing unintended electron beam deflections while maintaining the high throughput enabled by the blanking aperture array
Solution Approach 2:
The harmful effects of moisture absorption and charging are extracted and addressed by removing the root causes through the antistatic film. This film specifically targets and eliminates the sources of unintended beam deflection, allowing the blanking aperture array to function reliably at high speeds
2Manufacturing precision
If through holes and electrodes are formed on silicon substrate by semiconductor manufacturing technique, then manufacturing precision is improved, but substrate warpage occurs due to stress
Solution Approach 1:
The material properties of the substrate are changed by replacing silicon with a stress-reducing material such as glass or plastic. This parameter change in substrate material eliminates the warpage issue while preserving the manufacturing precision achieved through semiconductor fabrication techniques for forming through holes and electrodes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the precision and throughput of electron beam exposure by preventing unintended deflections and reducing substrate warpage, thereby improving the efficiency of the multi-electron beam writing process.
Implementation Method 1
a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes
Implementation Method 2
A pair of electrode for deflecting electron beam is provided around each of the through hole, respectively
Data Source
AI summary
A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.