Nanolaminate Spacer Films for Sub-11 nm Patterning
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Solution Overview
Problem
Current multiple patterning techniques face challenges in achieving 11 nm half-pitch features in semiconductor fabrication, particularly in extending self-aligned double patterning to smaller sizes due to limitations in lithographic techniques and material etch selectivity.
Innovation Solution
The method involves depositing nanolaminate films with alternating layers of different compositions and deposition conditions, using atomic layer deposition or conformal film deposition to form spacer layers that maintain high etch selectivity and mechanical stability, enabling advanced patterning schemes like quadruple patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic techniques are used for patterning, then existing manufacturing processes can be maintained, but feature size scaling to 11 nm half-pitch and below is not achievable
Solution Approach 1:
The patent applies segmentation by dividing the patterning process into multiple discrete steps (self-aligned double patterning, quadruple patterning) where each step creates a portion of the final pattern. This allows achieving 11 nm half-pitch features by breaking down the complex patterning task into manageable sequential operations that can be performed with existing lithographic tools.
Solution Approach 2:
The patent introduces a temporal dimension to the patterning process by using multiple deposition and etching cycles to create nanolaminate structures. Instead of attempting to create the final pattern in a single lithographic step, the method builds the pattern through repeated layering and selective removal of materials over time, enabling sub-11 nm features through process integration rather than single-step lithography.
2Manufacturing precision
If self-aligned double patterning is extended to smaller sizes, then feature size scaling is enabled, but material etch selectivity becomes insufficient
Solution Approach 1:
The patent employs composite materials by creating nanolaminate structures consisting of alternating layers of different materials (e.g., silicon oxide and silicon nitride) with distinct etch selectivities. This composite structure enables selective etching of specific layers while preserving others, providing the necessary etch selectivity for advanced patterning at 11 nm and below where conventional single-material approaches fail.
Solution Approach 2:
The patent applies parameter changes by carefully controlling the thickness, composition, and deposition conditions of each layer in the nanolaminate structure. By adjusting these parameters, the etch selectivity between adjacent layers is optimized to enable precise self-aligned patterning. The deposition temperature, pressure, and precursor ratios are tuned to create layers with differentiated etch rates, ensuring reliable pattern transfer at sub-11 nm dimensions.
3Reliability
If nanolaminate films with alternating layers are deposited, then etch selectivity and mechanical stability are improved, but process complexity increases
Solution Approach 1:
The patent applies universality by using the same atomic layer deposition equipment and basic process sequence to create multiple different nanolaminate structures throughout the fabrication process. The ALD tool is configured with different precursor and co-reactant combinations to deposit various material pairs (oxide/nitride, different metal oxides) with consistent process parameters. This multi-functional approach enables complex nanolaminate patterning using a single versatile deposition platform, managing process complexity through standardization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of features with a half-pitch as small as 10 nm, improving critical dimension uniformity and mechanical stability, and enabling more robust patterning at smaller nodes by tailoring the etch rate and selectivity of the nanolaminate films.
Implementation Method 1
PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION
Implementation Method 2
forming a nanolaminate film on the core layer, the nanolaminate film including a stack including at least at least one layer of a first film and at least one layer of a second film
Data Source
AI summary
Methods and apparatus for depositing nanolaminate films are provided. In various embodiments, the nanolaminate film may be deposited over a core layer, which may be patterned. The nanolaminate film may act as a spacer while performing a double or quadruple patterning process. The nanolaminate film may include at least two different types of film. In some cases, the two different types of film have different compositions. In some cases, the two different types of film may be deposited under different deposition conditions, and may or may not have the same composition. After the nanolaminate film is deposited, the substrate may be etched to expose the core layer. Some portions of the nanolaminate film (e.g., portions that form on sidewalls of features patterned in the core layer) may remain after etching, and may serve as a mask during later processing steps in a double or quadruple patterning process.