Dual Frequency Plasma Etching of Block Copolymer Patterns
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Solution Overview
Problem
Conventional etching methods face challenges in achieving precise control over etching conditions for self-assembled block copolymer patterns, leading to increased processing accuracy errors and non-uniformity in critical dimensions, especially when forming periodic patterns for miniaturized semiconductor devices.
Innovation Solution
A capacitively coupled plasma etching apparatus is configured to apply dual frequency powers to a lower electrode and a single frequency power to an upper electrode, optimizing ion energy distribution by adjusting the frequency and power of high frequency power supplies to concentrate ion energy within a specific range, thereby improving selectivity and reducing errors in etching self-assembled block copolymer patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching methods are used on self-assembled block copolymer patterns, then the etching process can be performed, but the processing accuracy error increases and non-uniformity in critical dimensions occurs
Solution Approach 1:
The patent applies parameter changes by optimizing etching conditions including gas flow rates, pressure, power, and temperature to achieve uniform etching of self-assembled block copolymer patterns. Specific parameters are tuned to prevent processing accuracy errors and maintain critical dimension uniformity throughout the etching process.
2Manufacturing precision
If dual frequency power is applied to optimize ion energy distribution, then selectivity between polymer components is enhanced, but device complexity increases
Solution Approach 1:
The patent employs dynamics by using variable frequency power supplies that can independently adjust frequencies for different electrodes. This dynamic control allows optimization of ion energy distribution and etching selectivity while managing apparatus complexity through programmable frequency modulation.
Solution Approach 2:
The patent changes electrical parameters by applying dual frequency power with specific frequency ranges (e.g., 13.56 MHz and 27.12 MHz) to different electrodes, optimizing ion bombardment energy and etching selectivity between polymer components while controlling the complexity through systematic parameter management.
3Manufacturing precision
If high frequency power is used to concentrate ion energy, then etching selectivity improves, but processing conditions become more difficult to control
Solution Approach 1:
The patent implements feedback control by monitoring etching rate, ion energy distribution, and plasma parameters in real-time, then adjusting power and gas flow parameters to maintain optimal etching selectivity. This feedback mechanism simplifies operation despite the complexity of high frequency power application.
Solution Approach 2:
The patent uses dynamic parameter adjustment during the etching process, allowing real-time optimization of ion energy concentration and etching selectivity. The system adapts processing conditions based on process state, making high frequency power application more controllable and easier to operate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes non-uniformity in the dimensions of the etched patterns, enhances selectivity between polymer components, and achieves precise control over the etching process, allowing for the formation of patterns with critical dimensions below those achievable by conventional photolithography.
Implementation Method 1
plasma is generated from a gas introduced into a processing chamber by applying high frequency power
Implementation Method 2
plasma is generated from a gas introduced into a processing chamber by applying high frequency power
Implementation Method 3
optimizing ion energy distribution by adjusting the frequency and power of high frequency power supplies to concentrate ion energy within a specific range
Data Source
Figure 1
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AI summary
An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled includes introducing a gas into a processing chamber; setting a frequency of a high frequency power supply such that a great amount of ion energy is distributed within a range smaller than ion energy for generating an etching yield of the first polymer and equal to or larger than ion energy for generating an etching yield of the second polymer, and supplying the high frequency power into the processing chamber from the high frequency power supply; generating plasma from the gas introduced in the processing chamber by applying the high frequency power; and etching the periodic pattern on a processing target object mounted on a susceptor 16 by using the generated plasma.