AlGaN Semiconductor Insulating Layer for Thermal Stability
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Solution Overview
Problem
Semiconductor devices using nitride semiconductors face challenges in achieving stable characteristics, particularly in thermal stability and frequency stability, due to interface states and leakage currents.
Innovation Solution
A semiconductor device configuration is introduced, featuring a first semiconductor region of Alz1Ga1-z1N with a first insulating portion comprising Al1-x1Six1O and Al1-x2Six2O regions, where x1 < 0.5 and x2 > 0.5, to reduce interface states and enhance thermal and frequency stability, and a third insulating region of SiO2 to suppress leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a single-layer insulating structure is used between the semiconductor region and electrode, then the device structure is simple, but thermal stability and frequency stability are poor due to interface states
Solution Approach 1:
The insulating member is divided into multiple insulating regions (first insulating region with Al-rich AlSiO, second insulating region with Si-rich AlSiO, and third insulating region with SiO2) stacked in sequence. Each region has different composition ratios and functions, working together to reduce interface states and improve thermal and frequency stability while managing complexity through functional segmentation.
Solution Approach 2:
The insulating member uses a composite structure combining different aluminum silicate oxide materials with varying Al and Si composition ratios. The first insulating region uses Al-rich AlSiO (x1<0.5), the second uses Si-rich AlSiO (x2>0.5), and the third uses SiO2, creating a composite material system that optimizes both stability and interface quality.
2Reliability
If high breakdown voltage is achieved through thicker insulating layers, then leakage current is reduced, but the device occupies more space and manufacturing becomes more difficult
Solution Approach 1:
Different insulating regions are designed with locally optimized properties: the first insulating region (Al-rich AlSiO) provides good interface quality with the semiconductor, the second insulating region (Si-rich AlSiO) provides transition and leakage suppression, and the third insulating region (SiO2) provides high breakdown voltage. This local quality optimization achieves high reliability without requiring excessive overall thickness.
Solution Approach 2:
The patent optimizes the thickness and composition ratios of each insulating region to achieve the desired breakdown voltage and leakage current characteristics. By carefully controlling the parameters (thickness, Al composition ratio x1<0.5, Si composition ratio x2>0.5) of each layer, high reliability is achieved while maintaining manufacturability and compact device size.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration achieves high thermal and frequency stability, reduces interface states, and allows for easy attainment of high breakdown voltage and low leakage current, thereby improving the overall stability and performance of the semiconductor device.
Implementation Method 1
a first insulating portion provided between the first partial region and the first electrode. The first insulating portion includes a first insulating region and a second insulating region... to reduce interface states
Implementation Method 2
a third insulating region provided between the second insulating region and the first electrode. The third insulating region includes SiO2... to suppress leakage current
Implementation Method 3
to enhance thermal and frequency stability
Implementation Method 4
to enhance thermal and frequency stability
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, and a first insulating member. The first semiconductor region includes Alz1Ga1-z1N (0≤z1<1). The first semiconductor region includes a first partial region. The first insulating member includes a first insulating portion between the first partial region and the first electrode. The first insulating portion includes a first insulating region and a second insulating region. The second insulating region is provided between the first insulating region and the first electrode. The first insulating region includes Al1-x1Six1O (x1<0.5). The second insulating region includes Al1-x2Six2O (0.5<x2).