AlGaN Light Emitting Element Oxygen Intermediate Layer
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Solution Overview
Problem
Current semiconductor light emitting elements for deep ultraviolet light face challenges in enhancing light emission output due to deterioration in crystal quality caused by non-uniformity or fluctuations in the crystal structure of the n-type clad layer.
Innovation Solution
Incorporating an intermediate layer with a higher oxygen concentration between the n-type clad layer and the active layer, formed by oxidizing the surface of the n-type clad layer, to stabilize the crystal structure and improve light emission output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If an n-type clad layer is used to improve light emission output, then light emission output is improved, but crystal structure non-uniformity transmits to the active layer causing deterioration in crystal quality
Solution Approach 1:
An intermediate layer with higher oxygen concentration is inserted between the n-type clad layer and the active layer. This intermediate layer acts as a mediator that blocks the transmission of crystal structure non-uniformity from the n-type clad layer to the active layer, thereby preventing deterioration in crystal quality while maintaining the light emission output improvement provided by the n-type clad layer.
Solution Approach 2:
The intermediate layer is designed with a specific local property (higher oxygen concentration) that differs from both the n-type clad layer and the active layer. This localized modification in oxygen concentration creates a buffer zone that specifically addresses the crystal structure non-uniformity issue at the interface between the n-type clad layer and the active layer, without affecting the overall functionality of the light emitting element.
2Device complexity
If the intermediate layer thickness is reduced to maintain device simplicity, then device complexity is reduced, but the ability to prevent crystal structure transmission may be compromised
Solution Approach 1:
The intermediate layer's effectiveness is optimized by controlling specific parameters including its thickness (5 nm to 50 nm), oxygen concentration (1×10^18/cm³ to 1×10^20/cm³), and aluminum content (5 at% to 50 at%). By adjusting these parameters, the layer achieves sufficient crystal structure stabilization while maintaining reasonable device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The intermediate layer effectively prevents the transmission of non-uniformity from the n-type clad layer to the active layer, resulting in improved crystal quality and increased light emission output, with the light emission output being 1.5 to 2.5 times greater when the intermediate layer is included, and maintaining stability even at lower oxidation temperatures and thinner layer thicknesses.
Implementation Method 1
forming an intermediate layer having a higher oxygen (O) concentration than the n-type clad layer, on a surface of the n-type clad layer; formed by oxidizing the surface of the n-type clad layer
Data Source
AI summary
A semiconductor light emitting element includes: an n-type clad layer formed of an n-type aluminum gallium nitride (AlGaN) based semiconductor material; an intermediate layer provided on the n-type clad layer and having a higher oxygen (O) concentration than the n-type clad layer; an active layer provided on the intermediate layer and formed of an AlGaN-based semiconductor material; and a p-type semiconductor layer provided on the active layer. The intermediate layer may contain at least oxygen (O) and aluminum (Al).