AlGaN Multilayer UV Emitters for Higher Radiative Recombination
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current UV LEDs are inefficient and expensive compared to Mercury vapor lamps, hindering their adoption for disinfection and other applications, and face challenges in achieving high radiative carrier recombination due to material growth issues with AlGaN.
Innovation Solution
Incorporating a novel doped multilayer structure adjacent to the active region of UV LEDs, comprising alternating layers of AlGaN with varying aluminum compositions, to enhance radiative recombination and light output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional AlGaN material structure is used in UV LEDs, then device simplicity is maintained, but radiative recombination efficiency is insufficient
Solution Approach 1:
The patent divides the n-type AlGaN layer into multiple thin alternating layers with different aluminum compositions (e.g., Al0.6Ga0.4N and Al0.7Ga0.3N) instead of using a single uniform layer. This segmentation creates multiple interfaces that enhance radiative recombination while maintaining overall structural organization.
Solution Approach 2:
Different regions of the n-type layer are assigned different aluminum compositions locally. The higher aluminum composition regions provide stronger confinement and higher radiative recombination, while lower aluminum composition regions facilitate carrier transport, creating local optimization throughout the layer.
2Productivity
If higher aluminum composition AlGaN layers are used to improve radiative recombination, then light output efficiency increases, but material growth difficulty increases
Solution Approach 1:
Instead of growing a single thick layer with high aluminum composition that would be difficult to grow uniformly, the patent segments it into multiple thin alternating layers with varying compositions. This makes the epitaxial growth process more manageable and reduces defects while maintaining high light output.
Solution Approach 2:
The patent varies the aluminum composition parameter locally within the n-type layer, creating alternating regions of Al0.6Ga0.4N and Al0.7Ga0.3N. This parameter variation allows optimization of both growth conditions and optical performance, as lower aluminum layers grow more easily while higher aluminum layers provide better radiative recombination.
3Loss of energy
If conventional single-layer n-type structure is used, then manufacturing process is simple, but energy efficiency is low
Solution Approach 1:
The conventional single-layer n-type structure is segmented into multiple thin alternating layers with different aluminum compositions. This segmentation creates additional interfaces that reduce non-radiative recombination losses and improve overall energy efficiency by directing more carriers toward radiative recombination pathways.
Solution Approach 2:
The patent creates a composite structure within the n-type layer by combining AlGaN layers with different aluminum compositions (Al0.6Ga0.4N and Al0.7Ga0.3N) in an alternating pattern. This composite approach leverages the advantages of both compositions to reduce energy loss while maintaining structural integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Significantly improves the energy efficiency and output power of UV LEDs, making them more competitive with traditional lamps and enabling broader commercial applications.
Implementation Method 1
enhance radiative recombination and light output
Data Source
AI summary
A multilayer structure comprising regions of higher aluminum (Al) composition as compared to adjacent layers, in combination with an undulating active region and controlled buffer layer crystal quality, promotes radiative recombination and improves the performance and efficiency of ultraviolet (UV) or far-UV light-emitting diodes (LEDs), laser diode (LDs), or other light emitting devices.


