Semiconductor Devices TRIZ Cases

A porous MOF interlayer lowers dielectric constant in 3D memory stacks, reducing parasitic capacitance, RC delay, and cell-to-cell interference.

Alternating semiconductor and non-semiconductor monolayers raise DMOS carrier mobility while a field plate depletes the drift region.

Segmented passivation, tunnel oxide, and insulating layers improve carrier collection and reduce recombination in solar cells.

An extended source over a ferroelectric channel improves memory window, cell density, and on-current while easing scaling limits.

A monolithic LED uses separated blue and green emitting regions to produce phosphor-free white light with better efficiency and stable color.

A superlattice drift region and adjacent field plate improve DMOS carrier mobility, reduce scattering, and help control dopant diffusion.

Vertical stacking of light emitting elements cuts pixel area and wiring while enabling independent color emission for higher-resolution displays.

Layered Al concentration tuning in the transition and hole injection regions improves carrier confinement and cuts sidewall recombination in micro LEDs.

Alternating semiconductor and non-semiconductor monolayers block dopant diffusion while boosting carrier mobility in vertical fin devices.

A tunneling oxide and intrinsic amorphous silicon stack cuts parasitic absorption while improving solar cell conversion efficiency.

Segmented doped regions, passivation layers, and isolation trenches improve carrier collection while limiting recombination in photovoltaic cells.

A polysilicon barrier with a metal-filled trench lowers gate resistance, speeds switching, and evens heating in power semiconductor gates.

A GAA floating-gate memory cell uses an inter-cell erase gate and blocking layer to cut erase voltage and limit adjacent-gate interference.

Selective wet etching creates an air gap near the HEMT gate to cut parasitic capacitance, reduce charge traps, and stabilize threshold voltage.

Offset dopant-blocking superlattices limit source-drain diffusion and scattering, improving nanostructure transistor mobility.

Curved gate opening ends suppress abnormal regrowth and voids, cutting leakage current while preserving breakdown voltage.

A conductive cap on the replacement gate stack protects the work function layer during contact etch and lowers gate contact resistance.

Selective silicide placement on optical sensor vias cuts dark current noise and preserves detection sensitivity at higher temperatures.

Semimetallic PtSe2 source-drain layers suppress source-drain tunneling and lower contact resistance in scaled fin-based transistors.

A tuned ion-exchange stress profile helps thick chemically strengthened glass resist flying stones, drop-ball impact, and surface scratching.

Independent emitters and two wavelength-converting layers widen chromaticity while preserving luminous efficiency and color rendering.

A graded AlGaN photodiode uses a >4.35 eV detection region and UV-C aperture filtering to reject solar background and improve sensing fidelity.

A Schottky junction at the fin base speeds depletion under the fins, improving vertical FET switching and short-circuit strength.

Sequential phosphor packaging lets multiple LED chips emit different colors while protecting bonded wires and simplifying lamp bead production.

UV irradiation at 200-500 nm removes flux and organic residues from cell chips, raising surface energy and peel strength in photovoltaic assemblies.

A parasitic BJT with high base resistance redirects avalanche current to the bulk region, extending SOA without increasing chip area.

A back-side concave mirror and adhesive resin focus more incident light onto a small photodiode, improving sensitivity and response speed.

A layered transparent electrode and opening structure improves LED electrical contact while limiting light absorption that lowers emission efficiency.

Curved front and side light extractors with a matched reflector improve LED light extraction, color purity, moisture resistance, and stability.

A healing gate reverses the stress field in LDMOS to suppress impact ionization, cut current degradation, and improve high-voltage reliability.

A vertical 2DHG HHMT structure boosts breakdown voltage and cuts dark current by using a channel supply layer and vertical interface.

Epitaxial transfer onto an insulating carrier integrates III-V and silicon devices with fewer bonding steps, lower packaging cost, and simpler substrate handling.

A multilayer III-V semiconductor stack uses intermediate and transition layers to improve light output and keep emission wavelength stable.

A multi-trench super-junction layout keeps breakdown voltage stable while lowering on-resistance without repeated column-spacing prototypes.

An InGaAs buffer layer and layer-specific doping reduce lattice-mismatch defects and stabilize III-V epitaxial growth for brighter emitters.

A split trench with shielded gate, grounded P-shield, and current spreading cuts gate oxide field, on-resistance, and switching loss.

A pre-etched step aligns NVM and logic regions, enabling shared gate replacement, better planarization, and lower contact resistance.

A side-reflecting light controller and layered optic structure improve color uniformity while preserving light output from upper and side emission.

A tapered mask window terminates III-V epitaxial dislocations at the sidewall, lowering defect density and improving semiconductor device characteristics.

Selective gate doping cuts electron injection at the dielectric edge, improving TDDB reliability in high-voltage semiconductor structures.

Selective thick dielectric stair regions in FinFET interconnects cut contact resistance near gates without adding full-process cost.

A split trench gate with an internal field plate trench increases current paths, lowers on-resistance, and preserves withstand voltage.

Selective absorber etching near a buried p-n junction cuts optical and electrical crosstalk while limiting passivation burden and dark counts.

Multiple transistor drains share fewer contact holes to flatten display topography, reducing stacked-layer cracking and short circuits.

A two-layer transparent conducting electrode improves LED contact reliability while limiting light absorption to preserve emission efficiency.

Curved reflector and extractor surfaces improve LED light extraction while limiting moisture ingress, pressure damage, and chromatic aberration.

A high-k buffer layer in composite pillar 3D FeFET memory reduces interfacial charge trapping, lowering voltage and improving endurance.

Dual wavelength conversion layers and reflective resin reduce total reflection, improving LED light extraction and color uniformity.

Inactive subregions block part of the current path, raising local current density to cut switching losses while preserving diode softness.

Localized omission of p++ contact regions lets a SiC gate pad keep ESD capability without a field oxide film, cutting process cost.