Carrier Wafer Transfer for III-V and Silicon Device Integration
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Solution Overview
Problem
The integration of multiple devices on a common carrier using 2.5D and 3D bonding/packaging is costly due to the number of processing steps, and existing technologies face challenges in simplifying this process, especially when incorporating semiconductor materials other than silicon, such as III-V materials, which require complex substrate handling.
Innovation Solution
The method involves epitaxially growing semiconductor layers on off-cut substrates, releasing the structures, and bonding them to an electrically insulating carrier substrate, allowing for the integration of III-V light sources or photovoltaic devices with silicon-based devices on a common carrier, simplifying the integration process and reducing packaging costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If 2.5D and 3D bonding/packaging methods are used to integrate multiple devices on a common carrier, then device integration is achieved, but the number of processing steps increases and manufacturing cost increases
Solution Approach 1:
The patent combines multiple device layers (III-V semiconductor layers and silicon-based layers) into a single integrated structure that is grown monolithically on a common substrate. This merging of previously separate bonding steps into a unified growth process reduces the number of processing steps while achieving the same device integration goal.
Solution Approach 2:
The patent performs preliminary epitaxial growth of all device layers on the substrate before any bonding or integration steps. By preparing the complete multi-layer structure in advance on the substrate, the subsequent integration process is simplified and requires fewer additional processing steps.
2Adaptability or versatility
If 2.5D and 3D bonding/packaging methods are used to integrate multiple devices on a common carrier, then device integration is achieved, but manufacturing cost increases
Solution Approach 1:
The patent merges multiple separate fabrication and bonding processes into a single monolithic growth process. This consolidation reduces manufacturing complexity and associated costs while maintaining the capability to integrate different semiconductor materials (III-V and silicon) on a common carrier.
Solution Approach 2:
The patent creates a universal substrate platform that can support both III-V semiconductor layers and silicon-based device layers simultaneously. This multi-functional substrate approach eliminates the need for separate processing lines and bonding steps for different material types, thereby reducing manufacturing cost.
3Adaptability or versatility
If semiconductor materials other than silicon (such as III-V materials) are used, then device functionality is enhanced, but substrate handling complexity increases
Solution Approach 1:
The patent merges III-V semiconductor layer growth and silicon-based device layer growth into a single monolithic structure formed on one substrate. This eliminates the need for separate substrate handling procedures for different material types, reducing substrate handling complexity while enabling enhanced device functionality from both material systems.
Solution Approach 2:
The patent performs preliminary growth of all necessary semiconductor layers (both III-V and silicon-based) on the substrate before any device-specific processing. This advance preparation of the complete multi-material structure simplifies subsequent substrate handling by presenting a unified structure rather than requiring separate handling of different material layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the integration of III-V devices with silicon-based devices, lowers packaging costs, and enables the creation of IoT structures by facilitating the integration of III-V light sources or photovoltaic devices on a carrier substrate, thereby reducing the complexity and expense associated with traditional methods.
Implementation Method 1
epitaxially growing a germanium layer on an off-cut semiconductor substrate
Implementation Method 2
epitaxially growing a first compound semiconductor layer on the germanium layer
Data Source
AI summary
Compound semiconductor and silicon-based structures are epitaxially formed on semiconductor substrates and transferred to a carrier substrate. The transferred structures can be used to form discrete photovoltaic and light-emitting devices on the carrier substrate. Silicon-containing layers grown on doped donor semiconductor substrates and compound semiconductor layers grown on off-cut semiconductor substrates form elements of the devices. The carrier substrates may be electrically insulating substrates or include electrically insulating layers to which photovoltaic and/or light-emitting structures are bonded.