MOF Interlayer Insulation for 3D Memory Signal Isolation
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Solution Overview
Problem
In semiconductor devices with a three-dimensional stack structure, reducing the thickness of interlayer insulation layers to increase integration leads to increased parasitic capacitance and signal interference between memory cells, hindering reliable signal processing.
Innovation Solution
Incorporating a metal-organic framework layer as the interlayer insulation structure, which has a low dielectric constant and porous structure, to reduce parasitic capacitance and control electrical signal interference by weakening fringing electric fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the thickness of interlayer insulation layers is reduced to increase integration, then the degree of integration is improved, but parasitic capacitance and signal interference increase
Solution Approach 1:
The patent employs a metal-organic framework (MOF) material with a porous structure as the interlayer insulation layer. The porous nature of the MOF material provides low dielectric constant while maintaining mechanical integrity, thereby reducing parasitic capacitance between adjacent memory cells even when the layer thickness is reduced for higher integration density.
Solution Approach 2:
The patent uses a composite material approach by combining metal ions or clusters with organic linkers to form a metal-organic framework. This composite structure achieves optimal balance between mechanical strength required for thin layers and low dielectric constant needed to minimize parasitic capacitance, resolving the contradiction between integration density and signal interference.
2Quantity of substance
If the thickness of interlayer insulation layers is reduced to increase integration, then the degree of integration is improved, but signal interference between memory cells increases
Solution Approach 1:
The porous structure of the metal-organic framework material creates tortuous paths for electric field lines, effectively weakening fringing electric fields that cause signal interference between adjacent memory cells. This allows reduced layer thickness for higher integration while maintaining signal isolation.
Solution Approach 2:
The patent changes the dielectric parameter of the interlayer insulation material by using MOF with inherently low dielectric constant. This parameter change reduces the strength of electric field coupling between adjacent cells, thereby minimizing signal interference even when physical spacing is reduced for higher integration.
3Ease of manufacture
If a conventional insulation material is used, then manufacturing is simpler, but parasitic capacitance cannot be effectively reduced
Solution Approach 1:
The patent changes the fundamental dielectric parameter of the insulation material by adopting metal-organic framework materials with intrinsically low dielectric constants. This material parameter change enables effective parasitic capacitance reduction while maintaining compatibility with existing semiconductor manufacturing processes through standard deposition and patterning techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal-organic framework layer effectively reduces parasitic capacitance, alleviates RC delay, and enhances the integration density and signal reliability of memory cells by minimizing signal interference.
Implementation Method 1
the metal-organic framework layer effectively reduces parasitic capacitance, alleviates RC delay, and enhances the integration density and signal reliability of memory cells by minimizing signal interference
Data Source
AI summary
A semiconductor device according to an embodiment of the present disclosure includes a substrate, a gate structure disposed over the substrate, a dielectric structure disposed to contact a sidewall surface of the gate structure over the substrate, and a channel layer disposed on a sidewall surface of the dielectric structure over the substrate. The gate structure includes a gate electrode layer and an interlayer insulation structure which are alternately stacked. The interlayer insulation structure includes a metal-organic framework layer.