Monolithic Multi-Peak LED Structure for Phosphor-Free White Light

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Solution Overview

Problem

Conventional white LEDs require multiple well layers and phosphor-based red light emitting diodes, which complicate manufacturing, limit space, and suffer from efficiency issues and color variation with viewing angles, making them unsuitable for micro LED displays.

Innovation Solution

A monolithic light emitting diode with a novel structure emitting multiple peak wavelengths without phosphors, featuring a light emitting region with separate portions for blue and green light, and a separation layer to achieve a multi-band spectrum and improved external quantum efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple well layers and phosphor-based red light emitting diodes are used to implement various colors, then color implementation is achieved, but manufacturing process becomes complicated and package size increases

Engineering Contradiction:
Improvecolor implementationVSAvoidmanufacturing process complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent merges multiple light emitting portions (first light emitting portion for green/yellow light, second light emitting portion for blue light) into a single monolithic LED structure. This integration eliminates the need for separate phosphor materials and multiple discrete components, thereby simplifying the manufacturing process while maintaining the capability to emit multiple colors through the different light emitting portions with different peak wavelengths

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The single LED structure performs multiple functions by incorporating different light emitting portions that emit at different wavelengths. The first light emitting portion emits green or yellow light while the second light emitting portion emits blue light, allowing one device to replace what would traditionally require multiple separate components or phosphor materials

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If multiple well layers and phosphor-based red light emitting diodes are used to implement various colors, then color implementation is achieved, but package size becomes large

Engineering Contradiction:
Improvecolor implementationVSAvoidpackage size
Core Design Contradiction:
Adaptability or versatilityVSVolume of moving object

Solution Approach 1:

The patent combines multiple light emitting functions into a single monolithic LED chip structure. By integrating the first light emitting portion and second light emitting portion within one device, the package size is significantly reduced compared to using separate phosphor materials and multiple discrete LED components, making it suitable for micro LED display applications

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent transitions from a planar arrangement of separate components to a vertical stacked structure where different light emitting portions are arranged in layers. This dimensional reorganization allows multiple light emitting functions to be packed into a smaller footprint area, reducing the overall package size while maintaining color versatility

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Illumination intensity

If phosphide-based semiconductor is used for red light emitting diode, then red light emission is achieved, but efficiency decreases as light emitting area decreases

Engineering Contradiction:
Improvered light emissionVSAvoidlight emitting efficiency
Core Design Contradiction:
Illumination intensityVSProductivity

Solution Approach 1:

The patent changes the material composition parameter by using InGaN-based nitride semiconductor for the second light emitting portion that emits blue light. This material substitution enables efficient light emission even at small light emitting areas, overcoming the efficiency degradation issue associated with phosphide-based semiconductors in miniaturized devices

Inventive Principle:
Principle #35Parameter changes

4Illumination intensity

If phosphide-based red light emitting diode is used, then red light emission is achieved, but color changes depending on viewing angles

Engineering Contradiction:
Improvered light emissionVSAvoidcolor stability
Core Design Contradiction:
Illumination intensityVSStability of the object's composition

Solution Approach 1:

The patent changes the material composition from phosphide-based semiconductor to InGaN-based nitride semiconductor. This parameter change results in improved color stability across different viewing angles, as the nitride semiconductor material exhibits more consistent optical properties and less sensitivity to viewing angle variations compared to phosphide-based materials

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the production of white light with enhanced external quantum efficiency and stable color across viewing angles, suitable for micro LED displays without the need for phosphors, improving manufacturing simplicity and efficiency.

Implementation Method 1

a light emitting region disposed between the first conductivity type semiconductor region and the second conductivity type semiconductor region, in which the light emitting region includes a first light emitting portion, a second light emitting portion

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS20240379905A1Light emitting diode emitting light of multi peak wavelengths
Publication Date: 2024.11.14 SEOUL VIOSYS CO LTD
  • US20240379905A1 patent drawing
  • US20240379905A1 patent drawing
  • US20240379905A1 patent drawing

AI summary

A light emitting diode according to an exemplary embodiment of the present disclosure includes a first conductivity type semiconductor layer; an active region including a barrier layer and a well layer; a strain control layer disposed between the first conductivity type semiconductor layer and the active region; a superlattice layer disposed between the strain control layer and the active region; a second conductivity type semiconductor layer disposed on the active region; and an electron blocking layer disposed between the active region and the second conductivity type semiconductor layer, in which the first conductivity type semiconductor layer and the well layer are represented by a predetermined formula, and a ratio of a mole fraction of In to a mole fraction of Ga in the first conductivity type semiconductor layer and a ratio of a mole fraction of In to a mole fraction of Ga in the well layer satisfy a predetermined equation.