Multi-Trench Super-Junction Layout for Breakdown Voltage Stability
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Solution Overview
Problem
The development of semiconductor devices with improved breakdown voltage and reduced on-resistance is hindered by the need for numerous prototypes to optimize the width and distance of column regions, leading to increased development costs and prolonged development periods due to varying product specifications.
Innovation Solution
A semiconductor device design featuring a multi-trench super-junction structure where the p-type column regions extend only in the X-direction, eliminating the need for adjustments in the distance between column regions, thus simplifying the optimization process and maintaining constant breakdown voltage while reducing on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the width of column region and distance between column regions are adjusted to optimize on-resistance and breakdown voltage, then device performance is improved, but development cost and development period increase due to numerous prototypes required
Solution Approach 1:
The patent changes the geometric parameters of the column regions (width W1, width W2, distance L1, distance L2) and impurity concentration parameters to achieve the desired balance between on-resistance and breakdown voltage. By systematically varying these parameters in the multi-trench SJ structure, the invention optimizes device performance without requiring extensive prototype iterations, as the parameter relationships can be designed based on theoretical calculations and simulations.
2Ease of manufacture
If the width of column region is changed to adjust on-resistance, then on-resistance is optimized, but distance between column regions must be readjusted to maintain breakdown voltage, requiring multiple prototypes
Solution Approach 1:
The patent divides the column region into multiple segments (first column region with width W1 and second column region with width W2) separated by trenches. This segmentation allows independent optimization of each column region's width and spacing, enabling on-resistance adjustment without requiring proportional adjustments to all dimensions. The multi-trench structure creates independent control zones that reduce design parameter interdependence.
Solution Approach 2:
The invention transitions from a single-dimensional column region arrangement to a two-dimensional multi-trench structure with column regions arranged in both width and spacing dimensions. By adding the trench depth dimension and creating a multi-layered column region configuration, the patent provides additional degrees of freedom for optimization, allowing on-resistance control through width adjustments while maintaining breakdown voltage through controlled spacing in the orthogonal dimension.
Data Source
AI summary
The semiconductor device includes a pair of gate-electrodes GE formed inside the pair of trenches TR via an gate insulating film (GI), respectively. The pair of column regions PC are spaced apart from each other in the Y-direction. The pair of trenches TR are provided apart from each other in the Y direction, are provided between the pair of column regions PC in the Y direction, and extend in the X direction. The ends of the pair of trenches TR in the X direction are connected to each other by a connecting portion TRa extending in the Y direction. The connection portion TRa is integrated with the pair of trenches TR. The pair of column regions PC extend in the X direction along the pair of trenches TR, and extend in the X direction toward the outer edge of the semiconductor substrate beyond the connection portion TRa.