Optical Sensor Silicide Layout for Dark Current Suppression

The patent applies local quality by forming silicide layers selectively on specific conductive vias rather than uniformly on all conductive vias. Specifically, silicide layers are formed on conductive vias that do not overlap with the light absorption layer, while omitting them on vias that would overlap. This localized approach optimizes electrical conductivity in regions where it benefits performance while avoiding dark current generation in sensitive detection regions, thereby resolving the contradiction between conductivity improvement and sensitivity maintenance.

The patent converts the potentially harmful effect of temperature increase into a beneficial outcome by strategically placing silicide layers. The selective formation of silicide layers on non-overlapping conductive vias allows the sensor to operate at elevated temperatures for improved detection capability while the absent silicide layers in overlapping regions prevent dark current generation, thus transforming what would be a harmful temperature effect into a beneficial performance enhancement.