Semiconductor Layer Structure for Stable Light Emission Wavelength
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor light-emitting devices face challenges in optimizing light emitting efficiency and wavelength stability due to limitations in the design and composition of their semiconductor layers, which affect their performance in various applications.
Innovation Solution
The semiconductor device incorporates a specific structure with a quaternary active region, ternary III-V semiconductor materials in the contact layer, and binary III-V semiconductor materials in the second semiconductor layer, along with an intermediate and transition layer, to enhance light emitting efficiency and wavelength stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional semiconductor layer structures are used, then device complexity is reduced, but light emitting efficiency and wavelength stability deteriorate
Solution Approach 1:
The semiconductor device is divided into multiple functional layers including n-type semiconductor layer, active layer, p-type semiconductor layer, first cladding layer, and second cladding layer. Each layer is specifically designed to perform particular functions such as carrier injection, light generation, wavelength filtering, and electrical contact, thereby improving light emitting efficiency while managing complexity through functional segmentation
Solution Approach 2:
The first cladding layer and second cladding layer act as intermediary structures between the active layer and external environment. These cladding layers with specific bandgap energies serve as wavelength filters to improve wavelength stability, while the p-type and n-type semiconductor layers serve as intermediaries for efficient carrier injection and extraction, resolving the contradiction between performance improvement and structural complexity
2Reliability
If simple semiconductor material composition is used, then ease of manufacture is improved, but wavelength stability deteriorates
Solution Approach 1:
The patent employs precise control of material composition parameters including indium content (0.03-0.25), aluminum content (0.05-0.30), and gallium content (0.65-0.90) in various layers. By optimizing these compositional parameters, the device achieves wavelength stability through controlled bandgap engineering while maintaining compatibility with conventional manufacturing processes for III-V semiconductor materials
3Reliability
If conventional contact layer structure is used, then device complexity is reduced, but electrical contact performance deteriorates
Solution Approach 1:
The contact structure is designed with local quality optimization where specific regions have tailored properties. The n-type semiconductor layer provides high electron concentration for n-contact, while the p-type semiconductor layer provides high hole concentration for p-contact. The cladding layers have specific bandgaps optimized for their respective contact functions, achieving superior electrical contact performance through localized material property optimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light emitting efficiency and wavelength stability, making the semiconductor device suitable for applications in illumination, medical care, display, communication, and sensing systems.
Implementation Method 1
The active region includes a quaternary semiconductor material, and the contact layer includes a ternary III-V semiconductor material
Data Source
AI summary
A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.