Switchable AlN Ferroelectric MEMS Material for Bipolar Actuation

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Solution Overview

Problem

Current piezoelectric MEMS actuators face limitations in force generation, particularly for non-resonant movements, due to the limitations of existing piezoelectric materials like PZT and AlN, which are not CMOS-compatible and require significant technological effort for integration, and pyroelectric materials that are not easily switchable for bipolar actuation.

Innovation Solution

A ferroelectric material with a mixed crystal structure comprising AlN and a nitride of a transition metal, where the proportion of the transition metal allows for switchable polarity by applying a switchover voltage below the material's breakdown voltage, enabling CMOS compatibility and reduced production complexity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Force

If conventional piezoelectric materials like PZT or AlN are used in MEMS actuators, then force generation capability is improved, but CMOS compatibility and ease of integration deteriorate

Engineering Contradiction:
Improveforce generationVSAvoidCMOS compatibility
Core Design Contradiction:
ForceVSEase of manufacture

Solution Approach 1:

The patent changes the material composition parameters by using AlN as the base material and adding specific amounts of transition metal elements (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn) to create a solid solution. This compositional parameter change enables the material to achieve both high piezoelectric coefficients (d33 > 5 pm/V) and CMOS compatibility, as AlN-based materials can be deposited at lower temperatures compatible with CMOS processes while the transition metal doping enhances the piezoelectric response.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite material system by forming a solid solution between AlN and transition metal nitrides (ScN, TiN, VN, CrN, MnN, FeN, CoN, NiN, CuN, or ZnN). This composite approach combines the advantages of AlN (CMOS compatibility, high breakdown field) with the enhanced piezoelectric properties of transition metal nitrides, achieving both force generation capability and ease of manufacture.

Inventive Principle:
Principle #40Composite materials

2Force

If ferroelectric multilayer systems are used to increase force output, then force magnitude is improved, but device complexity and manufacturing effort increase

Engineering Contradiction:
Improveforce magnitudeVSAvoidmanufacturing effort
Core Design Contradiction:
ForceVSDevice complexity

Solution Approach 1:

The patent modifies the material parameters to achieve high piezoelectric coefficients in a single-layer configuration, eliminating the need for complex multilayer structures. By optimizing the transition metal content (1-50 at.%) and selecting appropriate deposition conditions, the material achieves d33 > 5 pm/V, allowing single-layer actuators to produce sufficient force without the manufacturing complexity of multilayer systems.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent extracts the essential function of force generation from complex multilayer ferroelectric systems and implements it in a simplified single-layer structure. By taking out the core piezoelectric effect and enhancing it through material composition optimization rather than structural complexity, the invention achieves force generation capability without the associated manufacturing complexity of multilayer systems.

Inventive Principle:
Principle #2Taking out (Extraction)

3Ease of manufacture

If pyroelectric materials are used for actuation, then ease of manufacture is improved, but switchability for bipolar actuation deteriorates

Engineering Contradiction:
Improveease of manufactureVSAvoidswitchability
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The patent changes the electrical properties of the AlN-based material by doping with transition metals, which introduces ferroelectricity and enables reversible polarization switching. This parameter change in the material's electrical characteristics allows bipolar actuation capability while maintaining the ease of manufacture associated with AlN-based materials, as the switching is achieved through material composition rather than complex device architecture.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances force generation, minimizes the number of insulating and electrode layers, and allows for linear electric voltage to force conversion, improving the efficiency and compatibility of piezoelectric multilayer components in MEMS technology.

Implementation Method 1

Depending on the orientation of the polarization relative to the electric field that is effective, the material also expands or contracts (piezoelectric effect). This effect may be used in actuators.

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

Ferroelectric materials are a variant of piezoelectric materials that is characterized by a spatially rotatable electrical polarization P, the direction of which may be determined by an external electrical field E.

Methodology Applied
Scientific EffectFerroelectric effect:

Data Source

PatentUS11744158B2Ferroelectric material, MEMS component comprising a ferroelectric material, MEMS device comprising a first MEMS component, method of producing a MEMS component, and method of producing a CMOS-compatible MEMS component
Publication Date: 2023.08.29 FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG EV
  • US11744158B2 patent drawing
  • US11744158B2 patent drawing
  • US11744158B2 patent drawing

AI summary

A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.