Alternating SiOx SiCyNz Gate Insulating Film for Flexible Transistors
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Solution Overview
Problem
Conventional thin film transistor manufacturing methods require high-temperature processes, limiting the use of flexible substrates and resulting in devices with poor insulation performance and reliability, especially in display devices that demand higher performance.
Innovation Solution
A thin film transistor with a gate insulating film composed of alternately laminated SiOx and SiCyNz films, which reduces the need for high-temperature processing and enhances insulation and flexibility by trapping impurities and providing improved barrier properties, allowing for the use of flexible substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional CVD method is used to form gate insulating layer, then insulation performance is improved, but manufacturing process requires high temperature which limits substrate flexibility
Solution Approach 1:
The gate insulating layer is segmented into multiple thin films (3-18 layers) alternating between SiOx and SiCyNz materials. Each thin film has a thickness of 25-150 nm, creating a laminated structure that provides both insulation performance and flexibility. This segmentation allows the use of lower deposition temperatures compared to conventional single-layer CVD methods.
Solution Approach 2:
The invention uses composite materials by alternating SiOx (silicon oxide) and SiCyNz (silicon carbon nitride) films in a laminated structure. This composite approach combines the high insulation properties of SiOx with the flexibility and stress-management properties of SiCyNz, achieving both good insulation performance and substrate flexibility at lower processing temperatures.
2Reliability
If single-layer gate insulating film is used, then manufacturing process is simple, but insulation performance and reliability are insufficient for high-performance display devices
Solution Approach 1:
The gate insulating film is divided into multiple thin segments (3-18 alternating layers) rather than using a single thick layer. This segmentation into alternating SiOx and SiCyNz films enhances insulation performance through the combined properties of the materials while maintaining a manageable manufacturing process with controlled deposition parameters.
Solution Approach 2:
The invention employs composite materials by creating a laminated structure of SiOx and SiCyNz films. This composite approach improves insulation performance and reliability by leveraging the complementary properties of the two materials, while the regular alternating pattern keeps the manufacturing process systematic and controllable.
3Adaptability or versatility
If each film in laminated structure is too thin, then flexibility is improved, but film quality and insulation performance deteriorate
Solution Approach 1:
The invention optimizes the thickness parameter of each film to be within 25-150 nm. This parameter range is critical: thin enough to maintain flexibility and allow low-temperature deposition, but thick enough to ensure adequate insulation performance and film quality. The alternating structure of SiOx and SiCyNz films further enhances both flexibility and film quality.
Solution Approach 2:
By using composite SiOx and SiCyNz films in alternating layers, the invention achieves a balance where each material compensates for the limitations of the other. The SiOx provides insulation while the SiCyNz enhances flexibility and stress management, allowing each film to be relatively thin without compromising overall film quality or insulation performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high-quality gate insulating films at lower temperatures, improving insulation performance, reducing stress, and enabling the use of flexible substrates, resulting in reliable and high-performance thin film transistors suitable for demanding display applications.
Implementation Method 1
a gate insulating film forming step of alternately forming a SiOx film and a SiCyNz film by a plasma CVD method
Implementation Method 2
alternately forming a SiOx film and a SiCyNz film by a plasma CVD method
Data Source
AI summary
What is provided is a transistor including a gate electrode, a gate insulating film, a semiconductor film, a source electrode, and a drain electrode, in which the gate insulating film is a laminated film in which a SiOx film and a SiCyNz film are alternately formed, the total number of films constituting the laminated film is 3 or more and 18 or less, and the thickness of each film constituting the laminated film is 25 nm or more and 150 nm or less.