Aluminum Ion Source Using Al2O3 and Displacing Gas Sputtering
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Solution Overview
Problem
Generating aluminum ions for ion implantation is challenging due to aluminum's non-gaseous state and the need for extreme conditions to ionize its compounds, leading to low beam current and high maintenance requirements in conventional technologies.
Innovation Solution
An implantation device with an aluminum oxide source, such as an Al2O3 ceramic plug, is used within an ionization chamber, where a displacing gas is introduced to ionize the source, producing a higher beam current and reducing maintenance needs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If aluminum iodide is used as the ion source in conventional plasma sources, then aluminum ions can be generated for ion implantation, but the beam current is low (approximately 2 mA) and maintenance requirements are high
Solution Approach 1:
The patent changes the chemical composition parameter from aluminum iodide to aluminum oxide, and modifies the ionization mechanism from direct plasma ionization to chemically enhanced sputtering. This parameter change enables higher beam current (3.5 mA vs 2 mA) and reduces maintenance requirements by eliminating the need for frequent source changes and cleaning
Solution Approach 2:
The patent introduces a displacing gas as an intermediary substance that facilitates the ionization process. The displacing gas enables chemically enhanced sputtering of aluminum oxide, serving as a mediator between the solid aluminum oxide source and the plasma ionization process, thereby achieving efficient aluminum ion generation without direct contact between the source and plasma
2Quantity of substance
If extreme conditions are applied to ionize aluminum compounds, then aluminum ions can be generated, but the processing time and maintenance time increase significantly
Solution Approach 1:
The patent changes the ionization mechanism from extreme condition plasma ionization to chemically enhanced sputtering with displacing gas. This parameter change maintains high ionization efficiency while dramatically reducing maintenance time from 24 hours to approximately one hour between source changes
Solution Approach 2:
The patent replaces the mechanical/thermal extreme condition ionization system with a chemically driven sputtering process. By using chemical reactions between the displacing gas and aluminum oxide to generate ions, the system avoids the need for extreme thermal or mechanical conditions, thereby reducing maintenance time and improving operational efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves a higher beam current of approximately 3.5 mA and significantly reduces maintenance time, enhancing processing throughput and efficiency in ion implantation.
Implementation Method 1
A displacing gas is used to provide the chemically enhanced sputter process required to ionize the Al2O3 source into aluminum ions
Implementation Method 2
ionize the Al2O3 source into aluminum ions
Implementation Method 3
an ionization chamber having a cathode and a repeller arranged therein
Data Source
Figure 1
Figure 1A~1B
Figure 2A~2B
AI summary
An implantation device is disclosed. In particular, an implantation device includes an ionization chamber having a cathode and a repeller arranged therein. A source of aluminum ions is including within the chamber, wherein a displacing gas is introduced to the chamber during an ionization process to yield a beam of energetic aluminum ions.