Metal Oxide Bonding Interface for Piezoelectric Substrate Thinning
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Solution Overview
Problem
The bonding of a piezoelectric material substrate to a silicon supporting substrate through a metal oxide layer is prone to peeling during processing due to insufficient adhesive strength, which compromises the piezoelectric characteristics.
Innovation Solution
A bonding layer composed of a metal oxide with a controlled amount of aluminum atoms (1.0×10^11 to 1.0×10^15 atoms/cm^2) is applied to the silicon substrate, enhancing the adhesive strength and preventing peeling during the thinning process of the piezoelectric material substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a metal oxide bonding layer is used to bond the piezoelectric material substrate to the silicon supporting substrate, then the bonding process can be performed at relatively low temperature, but the adhesive strength is insufficient causing peeling during processing
Solution Approach 1:
The invention introduces aluminum atoms locally at the bonding interface between the silicon supporting substrate and the metal oxide bonding layer. This localized modification of the interface composition enhances the adhesive strength specifically at the critical bonding region without changing the overall bonding layer material or requiring high-temperature processing, thus resolving the contradiction between low-temperature bonding and sufficient adhesive strength.
Solution Approach 2:
The invention changes the compositional parameter of the bonding interface by controlling the amount of aluminum atoms (1.0×10^11 to 1.0×10^15 atoms/cm²) at the bonding surface. This parameter change in the interface composition improves the adhesive strength between the silicon substrate and metal oxide layer, enabling strong bonding at low temperatures without peeling during subsequent processing.
2Manufacturing precision
If the piezoelectric material substrate is thinned by processing to improve piezoelectric characteristics, then the piezoelectric performance is improved, but the supporting substrate and bonding layer may peel at the interface due to processing load
Solution Approach 1:
The invention performs preliminary action by introducing aluminum atoms at the bonding interface before the thinning process of the piezoelectric substrate. This advance modification of the bonding interface creates a strong adhesive bond that can withstand the mechanical loads generated during subsequent thinning and processing operations, preventing peeling while enabling the substrate to be thinned to achieve optimal piezoelectric characteristics.
Data Source
AI summary
A bonded body has a supporting substrate composed of silicon, piezoelectric material substrate, and a bonding layer provided on a bonding surface of the supporting substrate and composed of a metal oxide. An amount of aluminum atoms on the bonding surface of the supporting substrate is 1.0×1011 to 1.0×1015 atoms/cm2.