Amine-Free Post-CMP Cleaning Composition for Microelectronic Devices
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Solution Overview
Problem
Conventional post-CMP cleaning solutions for microelectronic devices often contain amines, which can be ineffective against inert contaminants and release harmful vapors, and may damage copper metallization or interfere with post-CMP layers, while also failing to ensure defect-free and scratch-free removal of residues and contaminants.
Innovation Solution
An amine-free composition comprising complexing agents, basic compounds, buffering agents, and water, optionally with oxidizing or reducing agents and solvating agents, specifically designed to remove post-CMP residues and contaminants without damaging low-k dielectric materials or copper interconnects, using a method that involves contacting the microelectronic device with the composition to achieve substantial removal of contaminants.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional amine-containing cleaning solutions are used to remove post-CMP residues, then cleaning effectiveness is improved, but harmful vapors are released and photoresist is poisoned
Solution Approach 1:
The patent changes the chemical composition parameters of the cleaning solution by replacing amine-containing compounds with alternative cleaning agents such as ammonium hydroxide, hydrogen peroxide, and surfactants. This substitution maintains cleaning effectiveness while eliminating the release of harmful amine vapors that poison photoresist
2Reliability
If strong cleaning agents are used to remove all contaminants, then cleaning effectiveness is improved, but copper metallization is damaged
Solution Approach 1:
The cleaning solution is formulated with locally optimized chemical properties that target specific contaminant types without attacking copper. The composition includes controlled concentrations of cleaning agents (0.1-5% ammonium hydroxide, 0.1-3% hydrogen peroxide, 0.1-2% surfactant) that provide sufficient cleaning power for organic and inorganic residues while being gentle enough to preserve copper metallization
Solution Approach 2:
The patent uses a composite cleaning solution containing multiple complementary ingredients: ammonium hydroxide for general cleaning, hydrogen peroxide for oxidative removal of organic residues, and surfactants for emulsifying oils and greases. This multi-component formulation achieves comprehensive contaminant removal while maintaining copper integrity through synergistic action of milder individual components
3Manufacturing precision
If conventional cleaning methods are used to ensure complete residue removal, then cleaning thoroughness is improved, but defects and scratches are introduced on the surface
Solution Approach 1:
The patent replaces aggressive mechanical cleaning methods with a chemically-driven cleaning solution that dissolves and removes residues through chemical reactions. The solution's composition (ammonium hydroxide, hydrogen peroxide, surfactants) enables thorough residue removal via chemical action rather than mechanical abrasion, thereby preventing surface defects and scratches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The amine-free composition effectively removes at least 95% of post-CMP residues and contaminants, ensuring defect-free and scratch-free surfaces while maintaining the integrity of low-k dielectric materials and copper interconnects, without releasing harmful vapors or causing corrosion.
Implementation Method 1
comprising at least one complexing agent, at least one basic compound, at least one buffering agent, water
Implementation Method 2
comprising at least one complexing agent, at least one basic compound, at least one buffering agent, water
Implementation Method 3
optionally at least one oxidizing agent, optionally at least one reducing agent
Data Source
AI summary
An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.