AMOLED Array Substrate Via-Hole Ion Injection Repair
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Solution Overview
Problem
The existing manufacturing process for AMOLED display devices results in a rough surface of the active layer at via-holes due to over-etching, leading to adverse effects on the metal-semiconductor contact and electrical characteristics of the TFT.
Innovation Solution
The process involves forming a first via-hole in the insulating structure to expose the active layer, followed by ion injection through the via-hole to create an ion injection region, allowing the source and drain electrodes to be electrically connected to the active layer, thereby improving the metal-semiconductor contact and electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulating layers are over-etched by 40% to ensure complete via-hole formation without residual layers, then the via-hole formation reliability is improved, but the active layer surface becomes rough and defect states increase
Solution Approach 1:
The patent applies preliminary action by performing ion injection into the active layer at the via-hole positions before forming the source and drain electrodes. This pre-treatment modifies the active layer surface properties in advance, compensating for the damage caused by over-etching. The ion injection region is formed beforehand to ensure good electrical contact when the electrodes are subsequently deposited, thus resolving the contradiction between reliable via-hole formation and maintained surface quality.
2Manufacturing precision
If the etching time is extended to penetrate through multiple insulating layers, then the via-hole penetration completeness is improved, but the ion bombardment duration increases causing more surface damage
Solution Approach 1:
The patent converts the harmful effect of prolonged ion bombardment during over-etching into a beneficial effect by deliberately using ion injection to create a modified region in the active layer. The same ion bombardment mechanism that causes surface damage is harnessed to form an ion injection region with improved electrical properties. This transforms the harmful extended etching into a useful pre-treatment step that enhances subsequent electrode contact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method repairs the damaged surface of the active layer, enhancing the metal-semiconductor electrical contact and improving the overall electrical characteristics of the TFT, ensuring better display quality.
Implementation Method 1
subjecting the exposed pattern of the active layer to ion injection through the first via-hole, so as to form an ion injection region located in pattern of the active layer
Data Source
AI summary
The present disclosure provides an array substrate, its manufacturing method and a display device. The array substrate includes a thin film transistor. A source electrode and a drain electrode are located above a pattern of an active layer, and the source electrode and the drain electrode are in electrical contact with the pattern of the active layer through a first via-hole penetrating an insulating structure. Before the formation of the source electrode and the drain electrode, the pattern of the active layer is subjected to ion injection through the first via-hole, so as to form an ion injection region.