Solid-State Devices TRIZ Cases

Mid-string devices propagate erase voltage to vertically stacked memory cells, resolving substrate isolation challenges during erasure operations.

A memory cell structure uses a rectifier element and two transistors to store data states without continuous power supply.

Ion injection through via-holes repairs active layer surfaces, resolving roughness from over-etching to improve metal-semiconductor contact reliability.

A polysilicon charge passage device dissipates process-induced charges to the substrate through selective doping.

A conformal insulating layer shields memory stacks during processing steps.

Low dielectric passivation layer reduces gate driving circuit capacitance, lowering power consumption and easing circuit load.

Third patterned metal layer connects gate driver wires through holes, reducing GOA region width while preventing short circuits.

Extending gate electrodes to overlap contact holes blocks light leakage, eliminating separate light shielding layers and improving aperture ratio.

Conductive film layer forms capacitors with TFT electrodes to increase capacitance, reducing GOA region width and enabling narrow-bezel products.

Splitting laser beams via a prism sheet creates alternating melt and seed zones, enabling uniform grain size control in semiconductor layers.

A flip-chip light emitting diode chip incorporates a reverse-parallel diode part on the substrate to provide electrostatic discharge resistance.

Groove structures in the light-emitting layer prevent color mixing from overlapping materials, maintaining high resolution.

Forming transparent members at lower temperatures than silicon carbide layers prevents thermal stress and separation between insulating layers.

Concave and convex lenses balance energy conversion efficiency across central and non-active areas, reducing optical loss and enhancing signal accuracy.

Patterned overcoat layer with recessed sidewalls reduces parasitic capacitance in active matrix arrays.

Parallel metal lines in the second layer reduce connection wiring resistance, improving touch sensitivity without increasing coupling capacitance.

A flexible touch panel uses a carbon nanotube transparent conductive layer on a polymer substrate to enable bendable display integration.

Ferrimagnetic layer extraction in magnetic Josephson junctions increases critical current and signal-to-noise ratio.

A display substrate connects auxiliary and second electrodes in parallel to lower equivalent resistance.

A white light-emitting device uses a binder to join three visible phosphors excited by ultraviolet or violet light.

Pyramid structures on the sapphire substrate reduce total internal reflection, increasing light extraction efficiency.

Solid-state perovskite solar cell eliminates liquid electrolytes using a nanostructured scaffold and direct metal contact.

Opaque polymeric fill blocks optical crosstalk from sloped mesas, enhancing display contrast while eliminating electric crosstalk for reliable isolation.

Resin package design segments leads to block flux entry, preventing corrosion and maintaining electrical connection reliability.

An inclined support sidewall bends channel structures to expose layers, reducing contact area while maintaining cell uniformity.

Controlled oxide layer oxygen defects lower write voltage to 10 V, reducing chip area and improving processing speed.

A lock and key alignment mechanism enables self-alignment during wafer lamination for robust 3D device stack structures.

Segmented front member design suppresses top plate warpage to improve load carrying capacity and impact resistance for sensitive X-ray recording media.

Segmenting the substrate into isolated islands disperses heat from high reverse bias voltage, maintaining illumination intensity.

Elastic deformation of integrated contact levers mitigates severe impact forces during harsh acceleration, preventing stiction-induced failure in MEMS devices.

A hole injection layer uses nickel oxide with controlled valence states to enhance electrical conductivity and reduce the Schottky barrier at the anode interface.

Alkali-free aluminoborosilicate glass composition with controlled oxide ratios for display substrates.

Preliminary repair column masking and continuity of useful action reduce operating speed loss during threshold voltage distribution testing.

Interface protection layers resolve material incompatibility between high-k dielectrics and electrodes, increasing capacitance while preventing film peeling.

Selective irradiation splits n-dopant precursors to structure OLED luminance, avoiding long exposure times and side reactions from strong acceptor molecules.

Gap engineering with filler materials prevents encapsulant intrusion into the space between LED contacts and substrate pads, maintaining device reliability.

Dual phosphor layers on a flexible substrate encapsulate blue LEDs, reducing harmful leakage while maintaining high color accuracy.

Photochromic materials in the color filter layer dynamically adjust absorption to lower external light reflectance without adding structural complexity.

Fluorinated polymers define pixel patterns during vapor deposition, eliminating mask deformation and cleaning costs while protecting sensitive organic layers.

Vertical 3D memory stacks increase storage density without requiring finer lateral patterning, reducing fabrication costs.

A semiconductor integrated circuit device uses a detecting circuit to monitor potential differences between power supply lines and triggers a protective circuit.

Ultra-high pulsed laser melts copper nanoparticles to form gate and source drain layers on flexible array substrates.

Shared signal lines reduce frame width by connecting multiple electrodes through switch units, lowering production costs while maintaining touch reliability.

Neutral plane adjustment layers counteract bending forces while redundant signal paths prevent crack formation in bent display regions.

A transflective layer and color filter film form a microcavity structure in an array substrate to enhance light brightness.

Segmenting display processing into autonomous local updates and host-managed image management reduces latency and power consumption in integrated touch screens.

Segmented wells with light blocking material prevent leakage between pixels, improving contrast.

Semiconductor cell structure uses modified gate-strip connections to integrate engineering change order cells into functional logic circuits.

Segmented sealing members balance gas barrier properties and flexural stress, enabling room temperature removal from rigid substrates.

A transfer substrate mediates organic layer patterning to prevent impurity contamination during manufacturing.

Digitline masks form conductive vias and wordlines to stabilize polarization states, preventing reversal during read operations.

Inclined side surfaces reflect light internally to minimize leakage and improve emission efficiency in vertically stacked micro display pixels.

A display device uses overlapping reference units to reduce routing line length.

Spraying phosphor slurry onto semiconductor elements creates a uniform wavelength conversion layer, resolving color unevenness from alignment issues.

White resin partitions divide the metal substrate into independent zones, resolving the trade-off between color temperature diversity and product size.

Isolating inter-select-gate electrodes from drain-select-level electrodes via dielectrics prevents electrical shorts and maintains operational efficiency.

A plate-like transparent member extends beyond the sensor chip to redirect reflected light away from the pixel array unit.

An asymmetric lightly doped drain structure reduces leakage current while increasing operation speed in organic light-emitting display pixel circuits.

Asymmetric contact hole placement in organic electroluminescence pixels reduces light reflection across boundaries.

An electron injection layer combines alkali metal halide and lanthanide materials to improve electron injection efficiency in organic light-emitting devices.

Composite organic materials in the emission layer balance charge mobility to resolve low exciton formation efficiency and reduced device lifespan.

A 3D semiconductor memory device uses dummy structures with varying surface patterns in connecting regions to support vertical integration.

One shadow mask opening covers three sub-pixels, overcoming alignment errors and contamination that limit conventional masks to 300 PPI.

A vertical channel transistor structure uses buried word lines and bit lines to increase effective channel length.

A programmable resistive device uses a P+/N well junction diode as a program selector to manage high currents for reliable memory cell operation.

Electrical field separates differently charged emitter materials into distinct layers during organic light-emitting diode drying.

An opaque fixing element positioned outside the interfacial area prevents adhesive contamination and misalignment while reducing light interference.

A filling member with light-scattering particles improves viewing angles in organic light-emitting displays.

A control voltage generating circuit produces a reference voltage using series-connected MOS transistors to drive delay circuits.

Cluster ion irradiation creates a surface modifying layer that traps metal contaminants, suppressing white spot defects in epitaxial silicon wafers.

A NAND memory system switches between normal and bundle operation modes to select word lines independently or in batches.

Depth-stacked light receiving sections with trench gate electrodes eliminate color filter absorption losses, boosting sensitivity and resolution.

A leakage current detection circuit monitors shared conductive regions in 3D memory arrays to identify electrical shorts before they occur.

Discrete auxiliary functional structures isolate adjacent OLED light emitting units to eliminate signal crosstalk.

Segmenting the peripheral area with a filler structure reduces core device height, enabling precise planarization control across large height differences.

A stacked mask structure with sacrificial layers forms mandrels and spacers to pattern semiconductor target layers.

Segmenting the bottom electrode into a narrow pillar and wide base resolves the trade-off between low reset current and mechanical adhesion.

A vapor deposition mask uses overlapping alignment marks on a main body and support to ensure precise component positioning.

Orthogonal spiro bond configurations in polycyclic compounds resolve charge balance issues, extending device lifespan while sustaining deep blue emission.

A 3D vertical memory manufacturing method replaces sacrificial layers with metal control gates and source lines to enhance electrical conductivity.

Varying the photoactive layer thickness prevents short circuits during cutting, enabling full substrate utilization and higher manufacturing yields.

A buried insulator layer stabilizes exposure light reflection rates through precise thickness design based on the lithography wavelength.

Omitting organic films outside the sealing portion prevents moisture absorption and maintains adhesion strength without adding photolithography steps.

Insulated second signal lines shield active components from selection line coupling, eliminating diagonal color unevenness.

Photoinduced electron film layers reduce cathode voltage drop under strong light, maintaining display uniformity in outdoor OLED panels.

Laser irradiation strips LED units from a supporting substrate to transfer them onto a receiving substrate, reducing manufacturing complexity and cost.

Segmented doped wells in a MOS capacitor reduce parasitic capacitance and resistance, enabling high capacitance per area for compact RF designs.

A self-aligned structure eliminates photolithography steps to scale resistive memory devices while corner effects accelerate program and erase speeds.

Segmented optical filters separate visible and infrared light to eliminate interference between RGB and Time-of-Flight pixels in integrated sensors.

A thin film transistor uses a dual semiconductor layer design to stabilize channel conductivity through electric field mediation.

Insulation bridges between heater strips restrict coil deformation, preventing short circuits during thermal expansion cycles.

Curved separation parts and through parts in the lead frame prevent electrical shorts while ensuring even light distribution across the package.

Asymmetric pixel banks align with the substrate to eliminate rotation, reducing equipment complexity and production time.

A green electroluminescent element uses composite host materials to balance charge transport and control exciton recombination.

A sacrificial self-assembled monolayer coats conductor surfaces to prevent slurry adhesion during chemical mechanical polishing.

Segmented band gap layers in a light receiving device improve responsiveness and reduce dark current for accurate near-infrared detection.

Germanium epitaxial layers in image sensors boost near-infrared absorption efficiency, resolving low optical sensitivity for time-of-flight applications.

A semiconductor storage device uses global signal lines and bypass transistors to manage voltage application across memory cells.

Inclined Brown-Millerite structure minimizes parameter dispersion by eliminating high-voltage electrical forming steps.