Avalanche LED Island Segmentation for Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional avalanche light emitting diodes (ALEDs) face low quantum efficiency due to heat dissipation constraints, as higher quantum efficiency leads to increased temperatures without an effective mechanism for heat dispersal.
Innovation Solution
The design incorporates multiple narrow, high-density filaments (P-I-N structures) within a semiconductor substrate, allowing for efficient heat dissipation and internal positive feedback to enhance luminescence, reducing heat-related issues and light loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If quantum efficiency is increased in conventional avalanche LEDs, then light output is improved, but temperature increases and heat dissipation becomes problematic
Solution Approach 1:
The patent divides the semiconductor substrate into multiple isolated islands or regions, each containing avalanche LED structures. This segmentation allows heat to be distributed across multiple discrete locations rather than concentrated in a single large structure, improving heat dissipation while maintaining high light output from the collective array of islands.
Solution Approach 2:
The patent creates regions with different properties: the island regions contain high quantum efficiency avalanche LED structures optimized for light generation, while the spaces between islands provide thermal management functionality. This local differentiation allows simultaneous optimization of light output in the island regions and heat dissipation in the inter-island regions.
2Illumination intensity
If high reverse bias voltage is applied to achieve avalanche multiplication, then illumination level is improved, but heat generation increases
Solution Approach 1:
By segmenting the device into multiple small islands, the patent reduces the total volume of material subjected to high reverse bias voltage at any one location. This localization of high-stress regions minimizes bulk heat generation while maintaining high illumination output from the distributed array of avalanche regions.
Solution Approach 2:
The patent converts the harmful heat generated by avalanche multiplication into a manageable parameter by designing the island structure with intentional thermal pathways. The heat that would normally be a problem is now channeled through the substrate and inter-island regions, which are specifically designed for heat dissipation, turning the thermal management challenge into a design feature.
3Device complexity
If conventional avalanche LED structures are used, then device simplicity is maintained, but heat dissipation capability is insufficient
Solution Approach 1:
The patent employs segmentation of the semiconductor substrate into multiple islands, which adds geometric complexity but maintains relative structural simplicity. Each island can be fabricated using standard semiconductor processes, and the overall pattern can be defined by simple photolithography steps, balancing manufacturing simplicity with improved thermal management.
Solution Approach 2:
The patent transitions from a planar two-dimensional structure to a three-dimensional island architecture. This dimensional change provides additional thermal pathways through the substrate and creates surface area for heat dissipation without significantly complicating the fabrication process, as the island patterns can be formed using standard lithographic and etching techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables higher quantum efficiencies while effectively dispersing heat, reducing hysteresis and light loss, and maintaining high illumination levels.
Implementation Method 1
A high reverse bias voltage typically creates impact ionization within an avalanche light emitting diode. The impact ionization can lead to avalanche multiplication, allowing the avalanche light emitting diode to produce a relatively high level of illumination
Implementation Method 2
The impact ionization can lead to avalanche multiplication, allowing the avalanche light emitting diode to produce a relatively high level of illumination compared to conventional light emitting diodes
Implementation Method 3
Avalanche light emitting diodes (ALEDs) are light emitting diodes typically implemented using P-N or P-I-N junctions in silicon or other semiconductor substrates
Data Source
AI summary
A circuit includes multiple doped regions in a substrate. A first of the doped regions has a tip proximate to a second of the doped regions and is separated from the second doped region by an intrinsic region to form a P-I-N structure. The circuit also includes first and second electrodes electrically coupled to the first and second doped regions, respectively. The electrodes are configured to supply voltages to the first and second doped regions to reverse bias the P-I-N structure and generate light. The first doped region could include multiple tips, the second doped region could include multiple tips, and each tip of the first doped region could be proximate to one of the tips of the second doped region to form multiple P-I-N structures. The P-I-N structure could also be configured to operate in double avalanche injection conductivity mode with internal positive feedback.