Dielectric Blocking Layer for Memory Device Reliability
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Solution Overview
Problem
Memory devices are susceptible to interpoly dielectric breakdown and memory device dielectric breakdown during implantation steps, and non-selective silicidation can cause shorts between memory devices and adjacent stacks, requiring additional masks to prevent these issues.
Innovation Solution
A method involving the formation of a dielectric blocking layer and selective silicidation, where a conformal insulating layer and polysilicon layer are formed over a memory stack, followed by a dielectric blocking layer to prevent implantation and silicidation, ensuring uniformity and preventing shorts between memory devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional masks are used to prevent silicidation on memory devices, then silicidation-related shorts are prevented, but device complexity and manufacturing cost increase
Solution Approach 1:
A conformal insulating layer is formed over the sidewalls and upper surface of the memory stack before any silicidation processes. This preliminary protective layer prevents silicidation from occurring on the memory device, eliminating the need for additional masks to block silicidation while maintaining reliability
Solution Approach 2:
The conformal insulating layer acts as an intermediary barrier between the silicidation process and the memory device. This intermediate layer selectively protects the memory device from silicidation while allowing silicidation to proceed on adjacent memory stacks, thereby preventing shorts without requiring complex mask structures
2Reliability
If implantation steps are performed on memory devices, then memory device functionality is achieved, but interpoly dielectric breakdown and dielectric breakdown occur
Solution Approach 1:
The conformal insulating layer is formed over the memory stack before implantation steps. This preliminary protective layer shields the dielectric structures from damage during subsequent implantation processes, preventing interpoly dielectric breakdown and memory device dielectric breakdown while allowing the implantation to proceed for memory device formation
Solution Approach 2:
The conformal insulating layer serves as a cushioning protective barrier that absorbs or mitigates the harmful effects of implantation on the dielectric structures. By providing this protective cushion before implantation, the layer prevents dielectric breakdown without interfering with the memory device functionality that requires implantation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and uniformity of memory devices by preventing interpoly dielectric breakdown, dielectric breakdown, and silicidation-related shorts, while eliminating the need for additional masks, resulting in a cost-effective and highly reliable memory device.
Implementation Method 1
Memory devices are susceptible to interpoly dielectric breakdown and memory device dielectric breakdown during implantation steps
Implementation Method 2
additional masks are often required to prevent silicidation on the memory device, which can cause shorts between the memory device and an adjacent memory stack
Data Source
AI summary
A memory device with a dielectric blocking layer for improving interpoly dielectric breakdown is provided. Embodiments include.