LED Substrate Laser Transfer Method for High-Resolution Displays

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Solution Overview

Problem

Current methods for transferring and integrating inorganic micro-scale light-emitting diode units onto TFT array substrates are inefficient, requiring multiple transfer processes, leading to high costs and low yield, especially for high-resolution display devices like FHD and above.

Innovation Solution

A manufacturing method involving a supporting substrate with laser irradiation to strip and transfer LED units onto a receiving substrate, utilizing a mask for selective laser stripping and improved alignment techniques to enhance transfer efficiency and accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If multiple transfer processes are used to integrate LED units onto TFT array substrates, then transfer completeness can be improved, but manufacturing complexity and cost increase significantly

Engineering Contradiction:
Improvetransfer completenessVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The supporting substrate is divided into multiple transfer regions, each containing a subset of LED units. This segmentation allows selective transfer of different regions through multiple laser irradiation processes, ensuring complete transfer while maintaining manageable process complexity. Each region can be transferred independently to the TFT array substrate.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The supporting substrate is pre-divided into multiple transfer regions before the transfer process begins. This preliminary segmentation enables systematic and organized transfer operations, where each region is prepared and transferred in a controlled sequence, improving both completeness and process manageability.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If multiple transfer processes are used to ensure complete LED unit transfer, then transfer completeness improves, but manufacturing time and cost increase

Engineering Contradiction:
Improvetransfer completenessVSAvoidmanufacturing cycle time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The laser irradiation process operates continuously across different transfer regions without interruption. After completing irradiation of one region, the system immediately proceeds to the next region, maintaining continuous useful action. This minimizes idle time between transfer operations and reduces overall manufacturing cycle time while ensuring complete LED unit transfer.

Inventive Principle:
Principle #20Continuity of useful action

3Ease of manufacture

If traditional transfer methods are used, then process simplicity is maintained, but transfer efficiency and precision decrease for high-resolution displays

Engineering Contradiction:
Improveprocess simplicityVSAvoidtransfer efficiency
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

The traditional mechanical transfer methods are replaced with laser irradiation technology. The laser selectively strips LED units from the supporting substrate and transfers them to the TFT array substrate through controlled irradiation. This substitution dramatically improves transfer efficiency and precision for high-resolution displays while maintaining operational simplicity through automated laser control.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The transfer process utilizes controlled changes in laser irradiation parameters (intensity, duration, wavelength) to selectively strip and transfer LED units. By adjusting these parameters, the system achieves high transfer efficiency and precision suitable for high-resolution displays, while the automated parameter control maintains process simplicity.

Inventive Principle:
Principle #35Parameter changes

4Device complexity

If traditional transfer methods are used, then equipment simplicity is maintained, but transfer precision and accuracy are insufficient for high-resolution displays

Engineering Contradiction:
Improveequipment simplicityVSAvoidtransfer precision
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

Mechanical transfer systems with limited precision are replaced with laser irradiation technology. The laser provides non-contact, highly precise transfer of LED units to specific locations on the TFT array substrate. This substitution achieves the required manufacturing precision for high-resolution displays while the automated laser positioning system maintains equipment operational simplicity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method significantly reduces the number of transfer processes, increases efficiency, and lowers costs, making it suitable for high-resolution display devices by ensuring precise and efficient integration of LED units onto TFT array substrates.

Implementation Method 1

irradiating a side of the supporting substrate away from the receiving substrate with laser, stripping the light-emitting diode units from the supporting substrate

Methodology Applied
Scientific EffectLaser ablation: Laser Ablation

Data Source

PatentUS11088296B2Light-emitting diode substrate and manufacturing method thereof, and display device
Publication Date: 2021.08.10 BOE TECHNOLOGY GROUP CO LTD
  • US11088296B2 patent drawing
  • US11088296B2 patent drawing
  • US11088296B2 patent drawing

AI summary

A light-emitting diode (LED) substrate and a manufacturing method thereof, and a display device are provided. The LED substrate includes a receiving substrate, the receiving substrate is provided thereon with a pixel definition layer and a plurality of LED units, the pixel definition layer defines a plurality of sub-pixel regions, each of the plurality of sub-pixel regions is configured to receive at least one of the plurality of LED units, and a solder point and an auxiliary metal member are both provided in the sub-pixel region, the auxiliary metal member is provided at a periphery of the solder point, an interval is provided between the solder point and the auxiliary metal member in a plan view of the receiving substrate, and a melting point of the auxiliary metal member is higher than a melting point of the solder point.