3D Nonvolatile Memory Contact Area Reduction via Inclined Sidewall
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Solution Overview
Problem
The existing 3-D nonvolatile memory devices face challenges in reducing the area of contact regions, which affects the degree of integration and uniformity of memory cells, leading to inefficiencies in memory device design.
Innovation Solution
The proposed solution involves a 3-D nonvolatile memory device with a support having an inclined sidewall, where channel structures with interlayer insulating and channel layers are alternately stacked and bent along the sidewall, exposing channel layers in the contact region, and select lines are formed to penetrate these layers, reducing the contact region area and improving integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If channel structures are formed with stepwise patterns in existing 3-D nonvolatile memory devices, then contact regions can be created, but the area of contact regions increases and uniformity of memory cells deteriorates
Solution Approach 1:
The support structure is designed with an asymmetric inclined sidewall rather than a symmetric vertical sidewall. This asymmetric geometry allows the channel structures to be bent at a gradual angle, eliminating the need for stepwise patterns and reducing the contact region area while maintaining uniformity of memory cells.
Solution Approach 2:
The invention transitions from a planar 2-D contact region configuration to a 3-D configuration by bending the channel structures along the inclined sidewall of the support. This dimensional change allows the channel layers to be exposed progressively, reducing the footprint of the contact region while maintaining uniform electrical characteristics.
2Area of stationary object
If channel structures are bent along an inclined sidewall of a support, then the contact region area is reduced and integration is improved, but the device complexity increases
Solution Approach 1:
The device is segmented into distinct functional regions: a support structure with an inclined sidewall, channel structures bent along this sidewall, and select lines formed in the contact region. This segmentation allows each component to be optimized independently, reducing the overall complexity despite the 3-D configuration.
Data Source
AI summary
A three-dimensional (3-D) nonvolatile memory device includes a support protruded from a surface of a substrate and configured to have an inclined sidewall; channel structures each configured to comprise interlayer insulating layers and channel layers which are alternately stacked over the substrate including the support, bent along the inclined sidewall of the support, wherein each of the channel structures comprises a cell region and a contact region, and the channel layers are exposed in the contact region; select lines formed over the channel structures; and a pillar type channels coupled to respective channel layers at the contact region and penetrating the select lines.