Amorphous Semi-Insulating Channel Control Layer for Power Transistors
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Solution Overview
Problem
The existing gate dielectric layers in power semiconductor components face limitations due to high field strengths leading to Fowler-Nordheim tunneling, degradation from temperature and radiation, and restricted voltage blocking capability, necessitating an enhancement in dielectric strength and control over the conducting channel.
Innovation Solution
A transistor component with a control structure featuring an amorphous semi-insulating channel control layer extending along a channel zone, allowing for controlled inversion channel development without the need for high gate voltages, and enabling improved voltage blocking capabilities through a Poole-Frenkel emission mechanism.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the gate dielectric layer thickness is increased to improve voltage blocking capability, then the voltage blocking capability is improved, but higher gate voltages are required for controlling the component
Solution Approach 1:
The patent changes the material parameter of the dielectric layer from conventional silicon oxide to a material with higher dielectric strength (such as silicon nitride or silicon oxynitride), allowing achieving the same voltage blocking capability with thinner layers and lower control voltages
Solution Approach 2:
The patent employs composite dielectric structures combining multiple materials (e.g., silicon oxide and silicon nitride layers) to achieve both high voltage blocking capability and low control voltage requirements by optimizing the electric field distribution
2Quantity of substance
If high field strengths are applied to achieve sufficient charge density in the conducting channel, then the charge density is sufficient, but Fowler-Nordheim tunneling current occurs and degradation is caused
Solution Approach 1:
The patent modifies the dielectric material properties to achieve higher breakdown field strengths, enabling sufficient charge density accumulation without reaching the Fowler-Nordheim tunneling threshold that causes degradation
Solution Approach 2:
The patent introduces an intermediate dielectric layer or interface structure that mediates between the high electric field requirements for charge density and the degradation prevention requirements, distributing the electric field stress
3Device complexity
If conventional gate dielectric materials are used to maintain simplicity, then the device complexity is low, but the dielectric strength is insufficient for high voltage applications
Solution Approach 1:
The patent changes the dielectric material from conventional silicon oxide to high-dielectric-strength materials such as silicon nitride or silicon oxynitride, achieving superior dielectric strength while maintaining a simple single-layer structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases the voltage blocking capability and reduces the risk of degradation, allowing for efficient control of the conducting channel while minimizing the impact of high field strengths and radiation, thus enhancing the overall performance of power semiconductor components.
Implementation Method 1
enabling improved voltage blocking capabilities through a Poole-Frenkel emission mechanism
Implementation Method 2
The dielectric strength of this gate dielectric layer influences the voltage blocking capability of the overall component
Implementation Method 3
At field strengths that lie above about 6 MV/cm a Fowler-Nordheim-tunneling-current over the oxide layer sets in
Data Source
AI summary
Disclosed is a transistor component having a control structure with a channel control layer of an amorphous semiconductor insulating material extending in a current flow direction along a channel zone.