Semiconductor Devices TRIZ Cases

A light emitting device uses a transparent conducting layer with regions of different electrical conductivity to direct current flow into the semiconductor structure.

M-shaped three-dimensional nano-structures on LED surfaces redirect internally reflected photons to improve light extraction efficiency.

Dummy diffusion regions in a drift ion well shift the peak electric field, increasing breakdown voltage without reducing saturation drain current.

A TiN and Ti gate electrode structure modifies the energy barrier at the nitride semiconductor interface.

Segmented P+ shallow junctions enable efficient hole injection while rapid minority carrier extraction reduces turning-off time losses.

An integrated RC snubber circuit within the conductive layer reduces drain voltage surge amplitude, preventing device breakdown from self-inductance.

A transistor component with an amorphous semi-insulating channel control layer enables controlled inversion channel development without high gate voltages.

A light emitting diode device uses a laminate conductive layer with sub layers at different depths to distribute electrical current across the chip.

A back-barrier layer with band gap discontinuity prevents dopant diffusion in high electron mobility transistors.

A lateral rectifier device integrates a doped III-N semiconductor layer over an electron supply to modulate threshold voltage.

A c-axis-aligned crystalline oxide semiconductor substrate supports gallium nitride light-emitting diode layers.

Stacked delta-doped layers in quantum well field effect transistors enable precise threshold voltage tuning through localized barrier engineering.

P-type floating regions near emitter trenches facilitate hole discharge via parasitic PMOS transistors to reduce turn-off loss.

A 3D quantum well transistor suspends the channel region under a gate structure to enhance carrier mobility.

A silicon-containing metal nucleation layer acts as a diffusion barrier between work function and bulk metal layers in semiconductor gate structures.

Segmented gate electrodes and insulating layers shield electric fields, reducing gate-drain capacitance to suppress self-turn-on.

Angled proton implantation shapes the field stop donor profile to improve short circuit ruggedness and reduce hot leakage current.

A multi-finger high-electron mobility transistor uses selective ion implantation to create a non-uniform two-dimensional electron gas concentration across the donor layer.

Multi-layer dielectric reflection structure replaces metallic layers to eliminate inter-diffusion and boost light extraction yield.

Curved drain finger electrode ends reduce termination electric fields to increase breakdown voltage without compromising unit cell density.

Segmented cell arrays reduce emitter efficiency in low-density zones to suppress parasitic transistor activation and prevent latch-up failure.

A photonic crystal layer collimates light to boost reflection efficiency in LED structures.

A semiconductor device uses a first III-V compound layer with prism planes to define an m-axis parallel to charge carrier channels.

Segmented gate branches increase spacing to minimize electrostatic damage while maintaining transistor performance and narrow bezel design constraints.

A FinFET source/drain structure uses segmented selective epitaxial growth to deposit silicon germanium and silicon layers on the fin.

A backside illuminated image sensor uses a deep metal grid to separate adjacent pixels and guide radiation waves into designated sensing regions.

A highly reflective dielectric film covers the four sidewalls of a single-sided light-emitting diode chip to redirect trapped optical energy back through the primary emission surface.

Inorganic reflective film layers redirect light within a light emitting device, resolving mechanical strength and optical reflectance trade-offs.

Multi-directional electrode extensions and transparent conductive layers distribute current evenly, reducing optical loss from absorption.

A semiconductor electrode with electric field distribution parts manages local field intensity through structural modifications.

Segmenting the semiconductor stack into a thinned region and bulk zone optimizes photon extraction while maintaining uniform current distribution.

A gate cut scheme deposits etch-selective dielectric layers and laterally removes one layer to create an undercut region.

A semiconductor device with doped sidewall surfaces and trench fill materials forming a superjunction structure.

Titanium and platinum electrode layers suppress indium diffusion from conductive bumps, ensuring reliable electrical connections at high temperatures.

A reflecting electrode structure generates a potential gradient at the semiconductor contact surface to control current distribution and enhance device stability.

A silicon carbide device uses a depletion suppressing layer to maintain current path width.

Segmenting trench fill materials with a wide band-gap barrier prevents dopant diffusion and defect formation while preserving carrier mobility.

An asymmetric gate tunneling transistor uses a wrap-around and flat gate structure to optimize carrier flow.

A housing positions an optical sensor die to shadow its sensitive surface from emitter light, eliminating the need for a physical septum.

Trench structures isolate bond pads from emission surfaces to redirect current flow and reduce parasitic light absorption.

Segmented trench structures with enlarged width regions allow flexible contact hole configuration, reducing mask layout complexity and manufacturing errors.

Polyamide compositions with titanium dioxide and stabilizers maintain high reflectivity after heat aging.

A white LED replaces phosphors with a metal oxide tunneling structure to enable adjustable peak wavelengths and color temperature control.

Segmented high-k and radiation-hard dielectric layers with a curved surface enable direct metal gate contact, resolving voltage limits at sub-7 nm scales.

Dual trench channels in a silicon carbide MOSFET lower interface resistance, boosting current density by 34-51% compared to single-channel designs.

Variable insulating film thicknesses across dual-width trenches prevent conduction resistance increases while boosting insulation reliability.

A shield structure in a GaN device suppresses leakage currents and parasitic capacitance to enable high-speed operation.

Segmented SiC termination zones manage electric field screening to reduce leakage currents under avalanche conditions.

A light-emitting element uses a groove in the semiconductor layer to confine current and suppress non-emission recombination at the active layer edge.