Semiconductor Trench Insulation Reliability
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining optimal conduction characteristics and insulation reliability due to variations in trench widths and insulating film thicknesses, leading to potential degradation in performance and increased risk of insulation damage.
Innovation Solution
The semiconductor device incorporates a first trench with a narrower width and a second trench with a greater width, featuring curved corners, where the insulating films are formed with varying thicknesses to enhance electrical coupling and resistance to insulation damage, allowing for efficient film formation and maintaining designed thicknesses to prevent conduction resistance increases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulating film thickness is increased to improve insulation reliability, then the resistance to insulation damage is enhanced, but the conduction resistance increases and performance degrades
Solution Approach 1:
The patent applies different insulating film thicknesses to different regions: the first insulating film in the active region has a first thickness, while the second insulating film in the peripheral region has a second thickness greater than the first. This local differentiation allows the peripheral region to have enhanced insulation reliability without degrading the conduction characteristics in the active region.
2Ease of manufacture
If the trench width is increased to facilitate film formation, then the ease of manufacture is improved, but the area occupied increases and device density decreases
Solution Approach 1:
The patent divides the semiconductor device into two distinct trench structures: a first trench in the active region and a second trench in the peripheral region. This segmentation allows each trench to be optimized independently - the first trench maintains smaller area for device density while the second trench has larger width for easier film formation and manufacturing.
3Manufacturing precision
If the insulating film thickness is reduced to maintain optimal conduction characteristics, then the conduction resistance is minimized, but the insulation reliability decreases and damage risk increases
Solution Approach 1:
The patent implements location-specific insulating film thicknesses where the first insulating film in the active region has optimized thickness for conduction characteristics, while the second insulating film in the peripheral region has increased thickness for enhanced insulation reliability. This resolves the contradiction by applying different thickness criteria to different functional regions.
4Reliability
If the peripheral trench width is increased to prevent insulation damage, then the resistance to insulation damage is enhanced, but the device area increases and productivity decreases
Solution Approach 1:
The patent segments the trench structure into active region trenches and peripheral region trenches. The peripheral trenches have larger width specifically for enhancing insulation damage resistance, while the active region trenches maintain smaller dimensions. This segmentation allows the device to achieve high insulation reliability without sacrificing overall device density and productivity.
Data Source
AI summary
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor chip having a first main surface including an active region and a peripheral region surrounding the active region; a first trench formed in the active region; a first insulating film formed on an inner surface of the first trench; a first electrode formed in the first trench interfacing the first insulating film, and forming a channel in a portion of the semiconductor chip facing the first insulating film; a second trench formed in the peripheral region and having a width greater a width of the first trench; a second insulating film formed on an inner surface of the second trench; and a second electrode formed in the second trench interfacing the second insulating film and electrically coupled to the first electrode.