Semiconductor Device Gate-Drain Capacitance Suppression
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Solution Overview
Problem
Semiconductor devices face challenges in achieving stable operations due to self-turn-on issues caused by high gate-drain capacitance relative to gate-source capacitance, leading to unreliable carrier region suppression and difficulty in setting the Cgd/Cgs ratio low enough to prevent self-turn-on.
Innovation Solution
The semiconductor device design includes a first conductive part electrically connected to the source electrode, positioned between the gate electrode and the carrier region connected to the drain electrode, with specific insulating layer configurations to shield the electric field and reduce gate-drain capacitance, while maintaining a low gate-source capacitance, thereby suppressing carrier region generation and ensuring stable operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate-drain capacitance is reduced by increasing the distance between gate electrode and drain electrode, then the Cgd/Cgs ratio decreases and self-turn-on is suppressed, but the device area increases and manufacturing complexity increases
Solution Approach 1:
The gate electrode is divided into multiple segments (first gate electrode and second gate electrode) with different positions relative to the drain electrode. The first gate electrode is positioned closer to the drain electrode while the second gate electrode is positioned farther away, allowing differential control of the electric field distribution. This segmentation enables reduction of gate-drain capacitance through the second gate electrode while maintaining necessary field control through the first gate electrode, thereby suppressing self-turn-on without requiring uniform increase in all electrode distances.
2Reliability
If insulating layers are added between electrodes and semiconductor regions, then electric field shielding is improved and carrier region suppression is enhanced, but device complexity and manufacturing steps increase
Solution Approach 1:
Insulating layers are introduced as intermediary elements between the gate electrode and the semiconductor regions (first and second semiconductor regions). These insulating layers act as mediators that shield the electric field from the gate electrode, preventing excessive field penetration into the semiconductor regions. This shielding effect suppresses unwanted carrier generation and maintains stable device operation. The insulating layers are strategically positioned only where field shielding is needed, rather than uniformly throughout the device, optimizing both performance and complexity.
3Reliability
If the distance between gate electrode and drain electrode is increased, then gate-drain capacitance decreases, but the device footprint area increases
Solution Approach 1:
Different regions of the gate electrode structure are assigned different qualities and positions. The first gate electrode is positioned locally closer to the drain electrode where field control is needed, while the second gate electrode is positioned locally farther away where capacitance reduction is needed. This local differentiation allows the device to achieve low gate-drain capacitance without requiring a uniform increase in the overall gate-drain distance, thereby maintaining a compact device footprint while achieving the desired Cgd/Cgs ratio for self-turn-on suppression.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the Cgd/Cgs ratio, suppresses self-turn-on, and ensures stable operations by aligning the end positions of the conductive part and semiconductor regions with insulating regions, enhancing the semiconductor device's reliability and performance.
Implementation Method 1
a first insulating layer between the second semiconductor region and the first conductive part in the second direction, a second insulating layer between the first portion and the first conductive part
Implementation Method 2
high gate-drain capacitance relative to gate-source capacitance, leading to unreliable carrier region suppression and difficulty in setting the Cgd/Cgs ratio low enough to prevent self-turn-on
Data Source
AI summary
According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first conductive part, first and second insulating layers. The third electrode includes first and second portions. The first portion is between the first electrode and the second electrode. The first semiconductor layer includes first, second, third, fourth and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor layer includes first and second semiconductor regions. The first conductive part is electrically connected to the first electrode. The first insulating layer includes a first insulating portion. The second insulating layer includes first and second insulating regions.