HEMT-Compatible Lateral Rectifier with Doped III-N Layer
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Solution Overview
Problem
Conventional power semiconductor devices, particularly silicon-based ones, face challenges in achieving high reverse breakdown voltage and low on-resistance, especially when integrated with GaN HEMT structures, leading to poor off-leakage current and performance losses.
Innovation Solution
A high-electron mobility transistor (HEMT)-compatible lateral field-effect rectifier device is designed with a layer of doped III-N semiconductor material and gate isolation material to modulate threshold voltage and reduce leakage, featuring a heterojunction between the semiconductor material and electron supply layer, and metal interconnects to convert the device into a two-terminal rectifier.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional silicon-based power devices are used, then manufacturing maturity is maintained, but reverse breakdown voltage and on-resistance performance deteriorate compared to GaN devices
Solution Approach 1:
The patent employs a composite structure combining GaN-based semiconductor layers with specific doping configurations (p-type and n-type layers) to create a rectifier device that maintains HEMT integration compatibility while achieving superior electrical performance comparable to advanced GaN rectifiers
Solution Approach 2:
The invention introduces localized doped regions within the GaN structure, specifically p-type and n-type semiconductor layers positioned at critical locations to modulate threshold voltage and control carrier flow, enabling high reverse breakdown voltage and low on-resistance without compromising overall device compatibility
2Reliability
If GaN-based power devices are used, then reverse breakdown voltage and on-resistance improve, but integration compatibility with HEMT structures deteriorates
Solution Approach 1:
The patent designs a rectifier structure that serves multiple functions: it provides high reverse breakdown voltage, maintains low on-resistance, and ensures compatibility with HEMT integration. The doped GaN layers are configured to perform both rectification and threshold voltage modulation, making the device universally applicable in GaN power electronics
Solution Approach 2:
The invention utilizes controlled changes in doping parameters (type, concentration, and distribution) within the GaN semiconductor layers to optimize electrical characteristics. By adjusting these parameters, the device achieves high performance while maintaining compatibility with standard HEMT fabrication processes
3Reliability
If Schottky barrier diodes or p-i-n diodes are formed on doped bulk GaN, then reverse breakdown voltage and on-resistance improve, but epitaxial structure compatibility with HEMT deteriorates without significant performance loss
Solution Approach 1:
The patent divides the semiconductor structure into distinct functional layers: p-type doped GaN layer, n-type doped GaN layer, and undoped or lightly-doped layers. This segmentation allows each layer to be optimized for its specific function while maintaining overall epitaxial compatibility with HEMT structures through standardized growth interfaces
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves a high reverse breakdown voltage and low gate leakage, comparable to state-of-the-art GaN rectifiers, with an on-resistance and power figure of merit comparable to existing GaN rectifiers compatible with HEMT structures.
Implementation Method 1
A layer of doped III-N semiconductor material is disposed over the electron supply layer
Implementation Method 2
a heterojunction between the semiconductor material and electron supply layer
Implementation Method 3
gate isolation material provides a barrier that provides the rectifier device with a low leakage and high reverse breakdown voltage
Data Source
AI summary
The present disclosure relates to a high electron mobility transistor compatible power lateral field-effect rectifier device. In some embodiments, the rectifier device has an electron supply layer located over a layer of semiconductor material at a position between an anode terminal and a cathode terminal. A layer of doped III-N semiconductor material is disposed over the electron supply layer. A layer of gate isolation material is located over the layer of doped III-N semiconductor material. A gate structure is disposed over layer of gate isolation material, such that the gate structure is separated from the electron supply layer by the layer of gate isolation material and the layer of doped III-N semiconductor material. The layer of doped III-N semiconductor material modulates the threshold voltage of the rectifier device, while the layer of gate isolation material provides a barrier that gives the rectifier device a low leakage.