Light-Emitting Element Groove Current Confinement
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Miniaturization of light-emitting elements leads to decreased light emission and extraction efficiency due to non-emission recombination at the outer edge portion of the active layer, where current confinement actions are difficult to implement while maintaining light extraction structures.
Innovation Solution
A light-emitting element with a stacked body including a first and second semiconductor layer and an active layer, featuring a groove in the first semiconductor layer that reduces thickness and enhances current confinement, combined with a reflecting body that directs light towards the light-emitting surface, improving both light emission and extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the light-emitting element is miniaturized to reduce size, then the device dimensions are reduced, but light emission efficiency decreases due to non-emission recombination at the outer edge portion
Solution Approach 1:
The patent applies local quality by creating a groove structure at the outer edge portion of the light-emitting element. This groove has different geometric properties (depth, width, shape) compared to the central region, specifically designed to suppress non-emission recombination at the edge while maintaining normal light emission in the central active layer region. The groove may be V-shaped, U-shaped, or have other cross-sectional profiles, and may extend partially or fully around the periphery.
Solution Approach 2:
The patent introduces a vertical dimension by forming grooves that extend downward from the surface of the light-emitting element. This vertical structuring creates depth variations that affect carrier distribution and recombination processes at the edge portion, adding a z-dimensional control mechanism to the otherwise planar device structure.
2Loss of energy
If the thickness of the semiconductor layer is reduced at the outer edge portion to achieve current confinement action, then light emission efficiency improves, but it becomes difficult to provide a light extraction structure due to miniaturization
Solution Approach 1:
The groove structure creates local thickness variations in the semiconductor layer at the outer edge portion without requiring complete thinning. The groove depth can be controlled to achieve appropriate current confinement while maintaining sufficient material for light extraction structures. This localized approach provides current confinement action where needed while preserving the ability to implement light extraction features.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration effectively suppresses non-emission recombination, enhances light emission efficiency, and maintains light extraction efficiency even in miniaturized elements by utilizing a groove in the semiconductor layer and a reflecting body to optimize light emission and confinement.
Implementation Method 1
a reflecting body that reflects light emitted from the end surface toward the groove
Implementation Method 2
by reducing the thickness of the semiconductor layer, the action that makes it difficult for a current to flow in a thin portion of the semiconductor layer, i.e., the current confinement action occurs
Implementation Method 3
emits light by recombination of electrons and holes generated in the active layer
Data Source
AI summary
A light-emitting element including: a stacked body; a light-emitting surface; and a reflecting body. The stacked body includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers, and has first and second surfaces on a side opposite to the active layer, and a circumferential surface that connects the first surface and the second surface and includes an end surface of the active layer, a groove formed in the first semiconductor layer from the first surface toward the active layer, having a depth such that the groove is separated from the active layer, and extending in a direction parallel to the first surface. The light-emitting surface is positioned on the first surface on a side opposite to the active layer and emits light generated in the active layer. The reflecting body reflects light emitted from the end surface toward the groove.