Semiconductor Trenches with Enlarged Width Regions for Contact Control
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Solution Overview
Problem
The challenge in semiconductor device manufacturing lies in accurately optimizing transistors for various applications, as designing complex mask layouts can be error-prone and costly, particularly when aiming for different switching speeds or turn-on resistances.
Innovation Solution
The semiconductor device features a plurality of trenches in a semiconductor substrate with enlarged width regions, where electrically conductive trench structures are connected through a vertical conductive structure in some regions, while others remain insulated, allowing for flexible configuration of contact holes only where necessary, reducing errors and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If complex mask layouts are designed to optimize transistors for different applications, then manufacturing precision and device performance are improved, but manufacturing cost and error risk increase
Solution Approach 1:
The trench structure is segmented into multiple enlarged width regions along its length, with each region capable of having independent electrical connections. This segmentation allows different portions of the same trench to serve different functions, enabling application-specific optimization without requiring entirely different mask layouts for each application.
Solution Approach 2:
A single standardized mask layout is designed that can produce trenches with multiple enlarged width regions, which can then be selectively connected or isolated using a simple contact mask. This universal structure can accommodate different application requirements (different switching speeds, turn-on resistances) without requiring individualized complex mask designs, thereby reducing manufacturing complexity and error risk.
2Manufacturing precision
If individualized mask layouts are created for different device types, then manufacturing precision is improved, but productivity and manufacturing efficiency decrease
Solution Approach 1:
The invention employs a universal mask layout that defines trenches with multiple enlarged width regions, all of which are formed in a single manufacturing step. Subsequent device variations are achieved through a simple contact mask that selectively connects or isolates these regions, rather than requiring entirely different mask layouts. This approach maintains high manufacturing precision for different device types while significantly improving productivity by standardizing the primary fabrication process.
Solution Approach 2:
The mask layout is designed in advance to include all potential enlarged width regions that may be needed for different applications. During manufacturing, these regions are pre-formed with the correct geometry, and then a simple contact mask determines which regions are electrically connected. This preliminary preparation of all possible regions enables rapid production of different device types without retooling or redesigning masks for each application.
3Reliability
If all trenches are connected through vertical conductive structures, then electrical connectivity is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
Instead of uniformly connecting all trenches with vertical conductive structures, the invention applies connections selectively at specific enlarged width regions based on local requirements. The contact mask determines which regions receive vertical conductive structures, allowing electrical connectivity to be established only where needed for the specific application, thereby reducing overall device complexity and manufacturing cost while maintaining necessary reliability.
Data Source
AI summary
A semiconductor device includes a plurality of trenches extending into a semiconductor substrate. Each trench comprises a plurality of enlarged width regions distributed along the trench. At least one electrically conductive trench structure is located in each trench. The semiconductor device comprises an electrically insulating layer arranged between the semiconductor substrate and an electrode structure. The semiconductor device comprises a vertical electrically conductive structure extending through the electrically insulating layer. The vertical electrically conductive structure forms an electrically connection between the electrode structure and an electrically conductive trench structure located in a first trench of at a first enlarged width region. The electrically insulating layer is arranged between a second enlarged width region of the plurality of enlarged width regions of the first trench and an electrode structure above the second enlarged width region without any vertical electrical connections through the electrically insulating layer at the second enlarged width region.