Amorphous Diffusion Barrier Formation for Scaled Semiconductor Structures
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Solution Overview
Problem
As semiconductor integrated circuit devices shrink, the barrier layer fails to effectively block metal atom diffusion towards the substrate due to grain boundaries in crystalline materials, affecting circuit performance.
Innovation Solution
A semiconductor structure manufacturing method that forms an amorphous diffusion barrier layer by thermally reacting metal compound and conductive material layers, eliminating grain boundaries and enhancing the barrier effect, while allowing for reduction in layer thicknesses by removing unreacted regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a crystalline barrier layer is used to block metal diffusion, then the barrier effect is provided, but grain boundaries enable metal atom diffusion towards the substrate
Solution Approach 1:
The patent changes the structural parameter of the barrier layer from crystalline to amorphous phase. This phase transformation eliminates grain boundaries while maintaining the barrier function, directly resolving the contradiction between providing barrier effect and preventing metal atom diffusion along grain boundaries
Solution Approach 2:
The patent creates a composite structure by forming an amorphous alloy barrier layer through in-situ reaction between metal compound layer and conductive material layer. The composite nature of the amorphous alloy provides both barrier functionality and diffusion prevention without grain boundaries
2Productivity
If device area is decreased to increase device density, then device density increases, but the barrier layer cannot effectively block metal diffusion
Solution Approach 1:
The patent changes the microstructural parameter of the barrier layer to amorphous phase, which provides superior barrier performance at reduced thickness. This enables effective metal diffusion blocking even in scaled-down device structures, maintaining reliability while supporting higher device density
Solution Approach 2:
The amorphous alloy barrier layer can be formed as a thin film with enhanced barrier properties. The thin film structure provides effective diffusion blocking with reduced thickness, enabling smaller device area while maintaining barrier effectiveness
3Length of moving object
If geometric dimension of integrated circuit devices is shrunk, then device area decreases, but grain boundaries in barrier layer adversely affect circuit performances
Solution Approach 1:
The patent transforms the barrier layer from crystalline to amorphous phase, eliminating grain boundaries that become problematic at scaled dimensions. The amorphous structure provides consistent barrier performance regardless of device size reduction, maintaining circuit performance in miniaturized devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively blocks metal atom diffusion, improving circuit performance and reducing the critical size of semiconductor devices by forming an amorphous diffusion barrier layer with no grain boundaries, thereby enhancing the barrier effect.
Implementation Method 1
thermally reacting at least a portion of the first reaction layer with at least a portion of the second reaction layer, to form an amorphous diffusion barrier layer
Implementation Method 2
form an amorphous diffusion barrier layer
Data Source
AI summary
A semiconductor structure manufacturing method according to the embodiments of the present application includes the following steps of: providing a semiconductor substrate; forming a first reaction layer on the semiconductor substrate; forming a second reaction layer on the first reaction layer; and thermally reacting at least a portion of the first reaction layer with at least a portion of the second reaction layer, to form an amorphous diffusion barrier layer. This amorphous diffusion barrier layer is an amorphous body with no grain boundary therein. As a result, the diffusion path for metal atoms is cut off, thereby improving the barrier effect of the barrier layer efficiently and solving the circuit performance issue caused by metal atom diffusion.