Amorphous Fluorine Barrier Layer for Semiconductor Storage Devices
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Solution Overview
Problem
The diffusion of fluorine from a fluorine-containing gas can deteriorate the insulation resistance of underlying layers in semiconductor storage devices during heating operations, as it reacts with materials in the layer structure.
Innovation Solution
A semiconductor storage device structure is developed with a barrier metal layer, an aluminum compound layer, an amorphous layer that vaporizes upon chemical reaction with fluorine, and a metal layer, where the amorphous layer is formed using materials like boron, boron nitride, or titanium nitride to prevent fluorine diffusion and maintain electrical integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a fluorine-containing gas is used to form a metal layer, then the metal layer can be effectively deposited, but fluorine reacts with the underlying layer and deteriorates its insulation resistance
Solution Approach 1:
An amorphous layer is introduced as an intermediary between the aluminum compound layer and the metal layer. This amorphous layer serves as a fluorine barrier that prevents fluorine from the metal layer deposition process from penetrating into and damaging the underlying insulating layer, thus protecting insulation resistance while allowing metal layer formation to proceed
Solution Approach 2:
The amorphous layer is formed in advance before the metal layer deposition using fluorine-containing gas. This preliminary action creates a protective barrier that prevents fluorine diffusion into the underlying layer before the harmful reaction can occur
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances fluorine blocking performance, preventing fluorine from remaining in the layer structure and thereby maintaining the insulation resistance and electrical properties of the device.
Implementation Method 1
an amorphous layer provided on the aluminum compound layer and including a material that vaporizes upon its chemical reaction with fluorine
Implementation Method 2
fluorine reacts with a material contained in a layer underlying the metal layer, and the resulting fluorine compound remains in the underlying layer
Data Source
AI summary
A semiconductor storage device includes a semiconductor substrate; an insulating layer provided on the semiconductor substrate; a barrier metal layer provided on the insulating layer; an aluminum compound layer provided on the barrier metal layer; an amorphous layer provided on the aluminum compound layer and including a material that vaporizes upon its chemical reaction with fluorine; and a metal layer provided on the amorphous layer.