Amorphous Radioisotope Micro Power Source for MEMS
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Solution Overview
Problem
Existing micro electro mechanical systems (MEMS) face challenges with power sources due to low energy density and durability, especially in extreme environments, as conventional chemical-reaction-based power sources degrade quickly and are not suitable for portable, long-life operation without recharging, and radioisotope power sources suffer from efficiency loss due to radiation damage in solid-state semiconductors.
Innovation Solution
A method for constructing an amorphous solid-state high energy-density micro radioisotope power source by combining semiconductor and radioisotope materials with dopants, liquefying the mixture within a micro chamber, and solidifying it to create a leak-proof, efficient voltaic semiconductor device that minimizes radiation damage and enhances energy conversion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If chemical-reaction-based power sources are used to provide portable power for MEMS, then ease of operation is improved, but energy density and duration of action deteriorate
Solution Approach 1:
The patent changes the fundamental energy source parameter from chemical reactions to radioactive decay, enabling energy densities 10^4 to 10^6 times greater than chemical systems while maintaining portable operation in MEMS devices
Solution Approach 2:
The patent creates a composite structure integrating radioisotope material with semiconductor material in a single monolithic layer, combining the energy density of radioisotopes with the conversion efficiency of semiconductors to achieve both high energy density and operational efficiency
2Use of energy by moving object
If solid-state semiconductor radioisotope power sources are used to achieve high energy density, then use of energy is improved, but reliability deteriorates due to radiation damage
Solution Approach 1:
The patent introduces an amorphous semiconductor material as an intermediary between the radioisotope and the rectifying junction, which absorbs the radiation damage while allowing efficient energy conversion to proceed, protecting the crystalline semiconductor from degradation
Solution Approach 2:
The patent changes the semiconductor structure from crystalline to amorphous phase, which is more resistant to radiation-induced lattice displacement damage, thereby maintaining reliability and efficiency over extended operation periods
3Duration of action of moving object
If power sources are designed for longer life operation, then duration of action is improved, but ease of operation deteriorates due to refueling requirements
Solution Approach 1:
The radioisotope material provides self-contained energy generation through radioactive decay, eliminating the need for external refueling or recharging operations, enabling continuous operation for the duration of the isotope's half-life
Solution Approach 2:
The patent selects radioisotopes with appropriate half-lives for the intended application duration, matching the energy source lifetime to the required operational life without requiring maintenance or refueling
4Ease of manufacture
If conventional semiconductor materials are used in radioisotope power sources, then ease of manufacture is improved, but object-generated harmful factors worsen due to radiation-induced degradation
Solution Approach 1:
The patent combines amorphous semiconductor material with crystalline semiconductor material in a single integrated layer, where the amorphous phase absorbs radiation damage while the crystalline phase maintains efficient charge carrier generation and transport
Solution Approach 2:
The amorphous semiconductor layer serves as a mediator between the radioisotope and the crystalline semiconductor, absorbing the harmful radiation effects while allowing the crystalline material to perform its energy conversion function efficiently
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a high energy-density power source with improved durability and efficiency, capable of continuous operation in extreme environments, offering energy densities 10^4 to 10^6 times greater than chemical systems and overcoming radiation-induced degradation issues, with self-shielding and reduced material costs.
Implementation Method 1
heating the body to a temperature at which the pre-voltaic semiconductor composition will liquefy within the micro chamber to provide a liquid state composite mixture
Implementation Method 2
cooling the body and liquid state composite mixture such that liquid state composite mixture solidifies to provide a solid-state composite voltaic semiconductor
Implementation Method 3
The radioisotope material emits α or β particles, which are coupled to a rectifying junction like a semiconductor p-n junction (or diode). The particles propagate to the rectifying junction and produce electron-hole pairs (EHPs). The EHPs are separated by the rectifying junction and converted into electrical energy.
Implementation Method 4
The concept of such direction conversion methods (alphavoltalics and betavoltaics) utilizes energy from radioactive decay.
Data Source
AI summary
A solid-state high energy-density micro radioisotope power source device including a dielectric and radiation shielding body having an internal cavity, a first electrode disposed a first end of the cavity, and a second electrode disposed at an opposing second end of the cavity and spaced apart from the first electrode such that a micro chamber is provided therebetween. The device further includes a solid-state composite voltaic semiconductor disposed within the micro chamber fabricated by combining at least one semiconductor material with at least one radioisotope material to provide a pre-voltaic semiconductor composition; depositing the pre-voltaic semiconductor composition into the micro chamber; heating the body to liquefy the pre-voltaic semiconductor composition within the micro chamber such that the semiconductor and radioisotope materials are uniformly mixed; and cooling the body and liquid state composite mixture such that liquid state composite mixture solidifies to provide the solid-state composite voltaic semiconductor.