Amphiphilic Material Monolayer for Semiconductor Pattern Drying
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Solution Overview
Problem
Existing methods for preventing resist patterns from inclining during the drying process in semiconductor manufacturing, such as using low surface tension rinse liquids or supercritical fluids, face issues like high chemical consumption, environmental concerns, and increased costs, as well as defects from residual surface-active agents or complex apparatus requirements.
Innovation Solution
A method involving the use of an amphiphilic material with hydrophilic and hydrophobic groups is applied to the surface of the washing liquid on the substrate, reducing surface tension and preventing pattern inclination during drying by forming a monomolecular film that minimizes capillary effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If spin drying is performed to remove washing liquid from patterns, then drying efficiency is improved, but surface tension causes patterns to incline
Solution Approach 1:
An amphiphilic material is introduced as an intermediary substance between the washing liquid and the pattern surface. This material reduces the surface tension of the washing liquid, thereby eliminating the capillary action that causes pattern inclination during spin drying, while allowing the drying process to proceed efficiently
Solution Approach 2:
The surface tension parameter of the washing liquid is changed by adding an amphiphilic material. This parameter change reduces the capillary force acting on the patterns during drying, preventing inclination while maintaining high drying efficiency through spin drying
2Manufacturing precision
If low surface tension rinse liquid is used to prevent pattern inclination, then pattern stability is improved, but chemical consumption and cost increase
Solution Approach 1:
Instead of using a large amount of low surface tension rinse liquid throughout the process, the amphiphilic material is applied partially and locally - either as a monomolecular layer on the pattern surface or as a small amount of additive in the washing liquid - which is sufficient to reduce surface tension and prevent inclination
3Manufacturing precision
If surface-active agent is added to reduce surface tension, then pattern inclination is prevented, but defects occur from residual agent
Solution Approach 1:
The amphiphilic material is used in such small quantities (monomolecular layer or trace amounts in washing liquid) that it effectively disappears during the drying process, leaving no harmful residues that could cause defects. The material serves its purpose of reducing surface tension and then is removed or evaporates
4Manufacturing precision
If amphiphilic material is spread on washing liquid surface, then pattern inclination is prevented, but additional process step is required
Solution Approach 1:
The application of amphiphilic material is merged with existing process steps - either by incorporating it into the washing liquid formulation or by applying it during the washing step itself - rather than adding a completely separate process step, thereby minimizing additional complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents pattern inclination, reduces defects, and enhances yield rates by controlling the amount of amphiphilic material used, while being cost-effective and environmentally friendly, utilizing existing apparatus with minimal modifications.
Implementation Method 1
spreading an amphiphilic material having a hydrophilic group and a hydrophobic group on the surface of the washing liquid remaining on the substrate after washing the pattern
Implementation Method 2
reducing surface tension and preventing pattern inclination during drying by forming a monomolecular film that minimizes capillary effects
Data Source
AI summary
A method of manufacturing a semiconductor device of the present invention has the steps of forming a pattern made of a processed film or a resist on a substrate, washing the pattern with a washing liquid which is a liquid including at least water, spreading an amphiphilic material that has a hydrophilic group and a hydrophobic group on the surface of the washing liquid remaining on the substrate after washing the pattern, and drying the substrate to remove the washing liquid on the substrate after spreading the amphiphilic material. When moisture is removed in the drying step, molecules of the amphiphilic material are spread on the surface of the washing liquid, so that the surface tension of the washing liquid is reduced to prevent the pattern from inclining.