Amplification Transistor Insulating Film Thickness for Noise Suppression
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Solution Overview
Problem
Existing solid-state imaging devices face challenges in suppressing noise and white blemishes in amplification transistors with element separation regions formed by ion implantation, as reducing pixel transistor sizes worsens random noise and increasing gate oxide film thickness worsens dark current and white blemishes.
Innovation Solution
A solid-state imaging device design where the channel region insulating film is thinner than the gate insulating film, and the element separation region insulating film is thicker than the channel region insulating film, with the channel region insulating film being part of the gate insulating film above the channel region and the element separation region insulating film being part of the gate insulating film above the element separation region, to reduce noise and white blemishes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the sizes of pixel transistors are reduced to obtain fine pixel size, then pixel density is improved, but random noise gets worse
Solution Approach 1:
The patent applies different gate insulating film thicknesses to different regions: a thinner film over the channel region and a thicker film over the element separation region. This local differentiation allows the channel region to maintain good electrical characteristics while the element separation region provides sufficient isolation, resolving the noise issue without sacrificing pixel density
2Area of moving object
If element separation is formed by ion implantation to secure photodiode areas, then pixel density is improved, but white blemishes increase due to gate electrode formation above element separation regions
Solution Approach 1:
The patent applies a thicker gate insulating film specifically over the element separation region formed by ion implantation. This localized thickness increase provides sufficient isolation to prevent white blemishes while maintaining the ion implantation method's advantage of securing photodiode areas for high pixel density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses the occurrence of noise and white blemishes in amplification transistors, allowing for improved image capture while maintaining fine pixel sizes and reducing leakage.
Implementation Method 1
element separation regions which are formed by ion implantation
Data Source
AI summary
The present disclosure relates to a solid-state imaging device and an electronic device that are configured to suppress the occurrence of noise and white blemishes in an amplification transistor having an element separation region which is formed by ion implantation. An amplification transistor has an element separation region formed by ion implantation. A channel region insulating film which is at least a part of a gate insulating film above a channel region of the amplification transistor is thin compared to a gate insulating film of a selection transistor, and an element separation region insulating film which is at least a part of a gate insulating film above the element separation region of the amplification transistor is thick compared to the channel region insulating film. The present disclosure can be applied to, for example, a CMOS image sensor, etc.