Angled Boron Doping in 3D NAND Silicon Columns for Body Erase
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Solution Overview
Problem
Current 3D BSSC NAND devices face challenges in supplying holes for body erase operations due to their architecture, leading to increased capacitance and difficulty in performing efficient erase operations, which hinders the ability to increase storage capacity and maintain performance.
Innovation Solution
A method is introduced to increase the depth of the p-type region in the sidewall of silicon columns by forming an ONON stack, doping polysilicon channels with a p-type dopant like boron at a specific angle to enhance hole supply, allowing for improved body erase operations and faster erase times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If 3D BSSC NAND device architecture is used to increase storage capacity, then storage capacity increases, but hole supply for body erase operations becomes insufficient
Solution Approach 1:
The patent applies local quality by creating a p-type doped region specifically in the sidewall of the silicon column where hole supply is needed for body erase operations. This localized doping approach concentrates the hole supply capability exactly where required, rather than uniformly doping the entire structure, thus resolving the contradiction between increased storage capacity and sufficient hole supply for erase operations.
2Ease of manufacture
If standard doping angle is used, then manufacturing process is simple, but p-type region depth is insufficient for effective body erase operations
Solution Approach 1:
The patent changes the doping parameter by specifying a doping angle between 30° and 45° relative to the surface normal, which is different from standard doping angles. This parameter change enables the dopant to reach the desired depth in the sidewall region, achieving sufficient p-type region depth for effective body erase operations while maintaining a relatively simple manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the number of holes in the columns, enhancing the performance of body erase operations, enabling faster erase times and more flexible erase segmentations, thus improving the quality of service for memory devices.
Implementation Method 1
A dopant (e.g., boron) can be emitted at an angle (e.g., between 30° and 45° from the top) to increase the number of holes on a particular side of each column
Data Source
AI summary
Systems and methods are disclosed including forming an alternating layer stack of an electronic circuit, the alternating layer stack comprising a plurality alternating conductive and dielectric layers; forming a set of memory cell columns in the alternating layer stack, wherein a bottom side of the set of memory cell columns is bonded to control circuitry; and doping, with a dopant, a top side of the set of memory cell columns, wherein the doping is performed by emitting the dopant toward the top side of the set of memory cell columns at a predetermined angle to form a doped region of material in each memory cell column of the set of memory cell columns