Angled Etch Process for Sub-35nm End-to-End Distance Control
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving end-to-end distances below 30 nm using traditional methods, which require multiple photolithographic and etch processes, leading to increased complexity and cost.
Innovation Solution
A method involving a single photolithographic process and three etch processes using an angled etch technique to modify the patterned features, allowing for reduced end-to-end distances without altering the feature width, thereby simplifying the semiconductor manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional multiple photolithographic and etch processes are used to achieve small end-to-end distances, then manufacturing precision is improved, but device complexity and production time increase
Solution Approach 1:
The patent segments the patterning process into distinct stages: forming mandrels at a first pitch, depositing spacers, selectively removing portions, and forming final features at a reduced pitch. This segmentation allows achieving sub-30nm end-to-end distances through controlled sequential steps rather than requiring multiple full photolithographic cycles, thereby improving precision while managing complexity.
Solution Approach 2:
The patent introduces vertical dimension utilization through spacer deposition and selective removal. By forming three-dimensional structures (mandrels, spacers, and patterned layers) and using vertical profile control, the process achieves horizontal pitch reduction without proportionally increasing process complexity. The angled etch process further exploits dimensional control to modify feature geometry precisely.
2Manufacturing precision
If traditional multiple photolithographic and etch processes are used to achieve small end-to-end distances, then manufacturing precision is improved, but production time increases
Solution Approach 1:
The patent performs preliminary actions by forming mandrels and spacers that define future feature locations and dimensions before final patterning. The spacer layer is deposited and patterned in advance, creating a template that guides subsequent etching steps. This preliminary structuring enables precise end-to-end distance control while reducing the number of iterative photolithographic steps required, thereby shortening production time.
Solution Approach 2:
The patent introduces intermediary structures (mandrels and spacers) that mediate between the photolithographic patterning and final feature formation. These intermediary elements serve as temporary templates that define the final feature geometry, allowing precise end-to-end distance control through a single photolithographic step followed by deterministic material removal, thus reducing overall production time compared to multiple lithographic cycles.
3Manufacturing precision
If traditional multiple photolithographic and etch processes are used to achieve small end-to-end distances, then manufacturing precision is improved, but manufacturing cost increases
Solution Approach 1:
The patent changes material parameters by selecting specific dielectric materials for spacers and mandrels with controlled etch selectivity. By adjusting material composition and thickness parameters, the process achieves precise end-to-end distance control through selective material removal rather than multiple lithographic steps. This parameter-based control reduces manufacturing complexity and cost while maintaining high precision.
4Manufacturing precision
If angled etch process is used to modify patterned features, then end-to-end distance is reduced, but process complexity increases
Solution Approach 1:
The patent employs asymmetric etching by directing ion beams at angled trajectories (e.g., 15-30 degrees from normal) to selectively remove material from specific sidewalls of features. This asymmetric material removal precisely controls end-to-end distances by modifying feature geometry in a directional manner. The asymmetry is controlled through ion beam angle and duration, providing precise dimensional control without requiring additional lithographic steps, thus managing process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production time and cost by eliminating unnecessary photolithographic and etch processes, achieving end-to-end distances below 35 nm while maintaining feature width, enhancing manufacturing efficiency.
Implementation Method 1
performing an angled etch process to modify the patterned feature using an ion beam, wherein the ion beam is directed at an angle to increase a length of the patterned feature without changing a width of the patterned feature
Data Source
AI summary
Embodiments of the present disclosure may be used for patterning a layer in a 5 nm node or beyond fabrication to achieve an end-to-end distance below 35 nm. Compared to the state of the art technology, embodiments of the present disclosure reduce cycle time and cost of production from three lithographic processes and four etching processes to one lithographic process and three etch processes.