Electric Discharge Tubes TRIZ Cases

A sample holder with a conductive circumferential portion releases electric charges during electron beam exposure.

A plug-in connector uses elastic clamp portions to maintain alignment with comb connectors.

An integrated manufacturing platform executes self-aligned via formation through sequential etching and deposition within a single vacuum chamber.

A microwave transmission system adjusts phase differences across multiple paths to distribute energy uniformly within a process container.

Segmented switching devices with ignition detection monitor circuit states to indicate single fault conditions and prevent electrical shock hazards.

A microwave output device generates pulse-modulated microwaves with adjustable power levels for plasma excitation.

A plasma processing stage supplies cooling gas through a dedicated hole to the carrier frame, preventing holding sheet distortion and abnormal discharge.

Rounded electrode corners around gas holes suppress electric discharge by balancing voltage distribution, preventing substrate damage.

Dual dopant source gas cylinders enable continuous ion implantation while a monitoring system detects pipe leaks to prevent toxic gas exposure.

Green sheet machining before sintering eliminates costly post-process grinding, resolving the trade-off between manufacturing precision and production time.

A dual-slit pneumatic apparatus directs pressurized gas across a wafer surface to remove liquid droplets without physical contact.

A simulation device calculates electron detection numbers using pre-stored penetration length and emission data for specific incidence points.

A substrate treatment apparatus uses a remote plasma supply to generate process plasmas for deposition and cleaning.

Rotating and translating a cylindrical target maintains coating thickness uniformity while eliminating contaminating particles from substrate movement.

Automated SEM nanoprobe tool detects secondary charged particles using a fast detector with sub-10 ns time resolution.

Three concentric coil antennas provide independent RF power control to maintain etch rate uniformity across large substrates.

A power supply system uses a phase-shifting coupler unit to combine amplifier path outputs into high-frequency signals.

A drawing apparatus measures processing target resistance to verify grounding state after an earthquake-induced stop.

Angled etch process reduces production time by replacing three lithographic cycles with one step while achieving sub-35nm end-to-end distances.

A magnetic core and pulse power system deliver energy to a plasma discharge region.

Heating preformed carbon nanotube yarn enables shape memory to strengthen the material, resolving fragility in large-scale applications.

Imaging transport tray indices detects substrate position to compensate for ion source output variations and ensure uniform irradiation.

A mounting device positions sample holders within the focal plane of inverted microscopes using an adjustable spacer mechanism.

Pedestal height difference adjusts edge gas exposure to resolve non-uniform ion density across semiconductor substrates.

A gimbal assembly with a spherical pivot head enables in-situ motion of a heater pedestal.

An aperture limits detector segment active areas to reduce image blurring and enable accurate high-order aberration measurement.

A substrate supporting unit segments heating into a shaft heater and stage heater to compensate for heat loss through the shaft structure.

Machine vision locates features to guide focused ion beam milling, reducing processing time and image data volume.

Optical imaging determines wafer position to compensate for misalignment, avoiding end effector damage and particle contamination during vacuum calibration.

Reinforcement learning adjusts ion energy and incidence angle to generate a process recipe for uniform depth profiles.

A compressed pixel map generation method extracts non-zero dose pixels to reduce data volume in electron beam lithography.

Multi-layer mask patterning with plasma ribbon beam etching reduces end-to-end spacing beyond traditional photolithography limits.

A copper liner tube shields the electron beam path inside an electron microscope column from external magnetic disturbances.

Segmenting the reaction chamber into vertical zones increases throughput while maintaining uniformity across multiple substrates.

Replacing hollow cathodes with a planar scandate design reduces power consumption while maintaining stable electron emission for CubeSat attitude control.

Adjusting platen tilt angle during ion implantation modifies effective penetration depth using high energy beams.

Vacuum granular masking patterns magnetic layers without breaking vacuum, preventing impurity introduction and preserving coercivity.

Segmented heating elements tune individual wafer zones to resolve center-edge temperature gradients and improve plasma processing uniformity.

Treating the mask layer with an electron beam in the absence of atomic halogen species reduces line edge roughness during plasma etching.

A light bath photoionizes neutral particles into positive ions using ultraviolet radiation, enabling electrostatic repulsion to prevent workpiece damage.

A compound field emitter combines a geometric substrate with a low work function calcium aluminate coating to boost electron emission.

Hydrogen treatment rehabilitates oxide coatings to prevent erosion from plasma bombardment and maintain consistent removal rates.

A solid ammonium hexafluorosilicate layer forms on sidewalls to block etchants, resolving void defects in semiconductor trenches.

A substrate heater uses a jacket and cooling gas supplier to manage temperature through a dedicated cooling space.

A quality of decay parameter validates exponential carrier decay for accurate semiconductor lifetime measurement.

Hydrogen and oxygen plasma treatments modify silicon nitride and oxide regions, enabling selective etching that prevents deposit formation.

Longitudinal hooks reduce arrangement width, shrinking connector size while maintaining clamping pressure.

Hydrophobic surfaces on the electrostatic chuck and isolation unit repel water molecules, preventing dew condensation during refrigerant cooling cycles.

A p-type diamond and n-type AlGaN heterostructure emits electrons via the photoelectric effect.