SEM Simulation Device Using Pre-calculated Electron Data
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Solution Overview
Problem
The Monte Carlo method used in scanning electron microscopes takes excessively long to calculate electron scattering, making it inconvenient for simulating multiple SEM images under different radiation conditions, and struggles to accurately simulate true secondary electron emission at material edges and joining surfaces due to low energy region discrepancies between theoretical and experimental values.
Innovation Solution
A simulation device that calculates electron detection numbers by associating incidence conditions with penetration length and sample configuration information, allowing for precise calculation of electron emission numbers at specific incidence points, and considers reflectance and penetration characteristics to improve simulation precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the Monte Carlo method is used to calculate electron scattering, then calculation precision of true secondary electrons is improved, but calculation time increases excessively
Solution Approach 1:
The patent divides the sample into multiple regions based on material types and configurations. For each region, pre-calculated electron distribution data is stored and retrieved during simulation, avoiding the need to perform full Monte Carlo calculations for every incidence point. This segmentation allows the system to maintain high precision where needed while significantly reducing overall calculation time.
Solution Approach 2:
The patent performs preliminary Monte Carlo calculations to generate electron distribution data for different sample regions and materials before the actual simulation. These pre-calculated data sets are stored in advance, allowing the simulation system to quickly retrieve and apply appropriate electron distribution characteristics during image generation without repeating time-consuming Monte Carlo calculations.
2Measurement precision
If the Monte Carlo method is used to simulate multiple SEM images under different radiation conditions, then simulation precision is improved, but time needed for simulation increases drastically
Solution Approach 1:
The system pre-calculates and stores electron distribution data for various sample regions, materials, and radiation conditions in advance. When simulating multiple SEM images under different radiation conditions, the system retrieves these pre-computed data sets and applies appropriate corrections based on the specific radiation parameters, rather than performing full Monte Carlo simulations for each condition. This dramatically reduces simulation time while maintaining precision.
Solution Approach 2:
The patent uses pre-calculated electron distribution data that can be efficiently adjusted and scaled according to different radiation conditions (energy, current, incidence angle). By changing parameters like radiation energy or incidence angle and applying correction factors to the pre-computed data, the system can rapidly generate accurate simulations for multiple conditions without repeating the full Monte Carlo calculation process.
3Ease of manufacture
If known values from documents are used for secondary electron emission parameters, then calculation simplicity is improved, but accuracy at edges and joining surfaces deteriorates
Solution Approach 1:
The patent recognizes that different regions of the sample require different electron distribution characteristics. It divides the sample into multiple regions based on material types and geometric configurations (flat surfaces, edges, joining surfaces). For each region type, the system stores pre-calculated electron distribution data that accurately reflects the local characteristics. This allows the simulation to maintain high accuracy at edges and joining surfaces while keeping the overall calculation manageable through regional specialization.
Solution Approach 2:
The system segments the sample into distinct regions (different materials, different geometries) and assigns specific electron distribution data to each region type. This segmentation enables the use of simplified calculations for uniform regions while applying more accurate, region-specific electron distribution characteristics at critical locations like edges and material interfaces, balancing simplicity and accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces calculation time and enhances the accuracy of simulating scanning images of samples with varying configurations, enabling high-speed and high-precision simulation of electron emission at edges and surfaces of different materials.
Implementation Method 1
Penetration length information in which incidence conditions of charged particles and a penetration length are associated with each other
Implementation Method 2
The true secondary electrons are electrons that are generated when primary electron beams are scattered inelastically in the sample and excite atoms in the sample
Implementation Method 3
for the number of secondary electrons generated, the energy, and the angle, values known in documents are used as parameters and reflectance of the secondary electron
Data Source
AI summary
A simulation device calculates a detection number of electrons generated by charged particles radiated to a sample by a simulation and generates a simulation image of the sample. The simulation device holds penetration length information (272) in which incidence conditions of the charged particles and a penetration length are associated with each other, sample configuration information (271) which shows a configuration of a sample, and emission electron number information in which the incidence conditions of the charged particles and an emission electron number are associated with each other. The simulation device calculates the number of electrons emitted from a predetermined incidence point, on the basis of incidence conditions at the predetermined incidence point, the penetration length information (272), the sample configuration information (271), and the emission electron number information.